<p>Systematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications & nbsp;</p>

Badreddine S., Joshya R. S., DEMİR İ., Faouzi S., ALTUNTAŞ İ., Lagarde D., ...Daha Fazla

OPTICS AND LASER TECHNOLOGY, cilt.148, 2022 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 148
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1016/j.optlastec.2021.107714
  • Dergi Adı: OPTICS AND LASER TECHNOLOGY
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Applied Science & Technology Source, Communication Abstracts, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: High-xIn(x)Ga(1-x)As, Dislocation density, S-shaped, FKOs, LSE, Localized state, SWIR detector, TEMPERATURE-DEPENDENCE, PHOTOREFLECTANCE, PHOTOLUMINESCENCE, RECOMBINATION, LUMINESCENCE, EXCITONS, MODEL
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

Optical and structural properties in high-x InxGa1-xAs (x > 0.65) samples with varying indium concentration grown on InP (1 00) substrate are reported. By increasing the indium fraction, it was found by the high-resolution X-ray diffraction (HR-XRD) study that the dislocation density in the InxGa1-xAs epitaxial layer significantly increased, and the surface quality deteriorated remarkably. Photoreflectance (PR) spectra show the presence of Franz-Keldysh Oscillations (FKOs) features above the InxGa1-xAs energy bandgap. The strain-induced electric field is then estimated directly from the FKOs periods. Temperature-dependent photoluminescence (TDPL) measurements from 10 K to 300 K showed carrier locations (S-shape). This abnormal behavior is due to the dislocation density associated with fluctuations in the indium concentration. A quasi-stationary rate equation model for the temperature-dependent luminescence spectra of the localized state material system is proposed to interpret the band gap emission process quantitatively. Low-temperature (10 K) time-resolved PL measurements show the increase of lifetime with increasing the indium concentration. Yet, the addition of only 1.7% of indium concentration results in a strong enhancement of PL lifetime by ~ 80%.& nbsp;All these results reveal a more precise picture of the localization and recombination mechanisms of photo-generated carriers in the InGaAs layer, which could be the crucial factors in controlling the performance of high indium content InGaAs SWIR detector.