Binding Energies and Optical Properties of Power-Exponential and Modified Gaussian Quantum Dots

Alauwaji R. M., Dakhlaoui H., Algraphy E., UNGAN F., Wong B. M.

Molecules, cilt.29, sa.13, 2024 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 29 Sayı: 13
  • Basım Tarihi: 2024
  • Doi Numarası: 10.3390/molecules29133052
  • Dergi Adı: Molecules
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Biotechnology Research Abstracts, CAB Abstracts, Chemical Abstracts Core, Communication Abstracts, Food Science & Technology Abstracts, MEDLINE, Metadex, Veterinary Science Database, Directory of Open Access Journals, Civil Engineering Abstracts
  • Anahtar Kelimeler: binding energy, GaAs quantum dot, hydrogenic impurity, optical absorption coefficient, Schrödinger equation
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

We examine the optical and electronic properties of a GaAs spherical quantum dot with a hydrogenic impurity in its center. We study two different confining potentials: (1) a modified Gaussian potential and (2) a power-exponential potential. Using the finite difference method, we solve the radial Schrodinger equation for the (Formula presented.) and (Formula presented.) energy levels and their probability densities and subsequently compute the optical absorption coefficient (OAC) for each confining potential using Fermi’s golden rule. We discuss the role of different physical quantities influencing the behavior of the OAC, such as the structural parameters of each potential, the dipole matrix elements, and their energy separation. Our results show that modification of the structural physical parameters of each potential can enable new optoelectronic devices that can leverage inter-sub-band optical transitions.