In this present work, the effects of the structure parameters such as the right-well width and the rightbarrier height on the linear, third-order nonlinear and total absorption and refractive index changes of asymmetric double semi-V-shaped quantum well are theoretically studied by using the compact-density matrix approach and iterative method. The electronic structure of this system is obtained by solving Schrodinger equation within the framework of effective mass approximation. Numerical results are presented for a typical GaAs/AlxGa1-xAs asymmetric double semi-V-shaped quantum well. The obtained results show that the right-well width and the right-barrier height have great effects on the optical characteristics of these structures. (C) 2015 Elsevier B.V. All rights reserved.