The hydrostatic pressure and temperature effects on donor impurities in GaAs/Ga1-xAlxAs double quantum well under the external fields

Kasapoglu E.

PHYSICS LETTERS A, cilt.373, sa.1, ss.140-143, 2008 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 373 Sayı: 1
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1016/j.physleta.2008.10.080
  • Dergi Adı: PHYSICS LETTERS A
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.140-143
  • Anahtar Kelimeler: Donor impurities, Double quantum well, Hydrostatic pressure, Temperature, Electric and magnetic fields, ELECTRIC-FIELD, SINGLE, GAAS, ENERGY
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

The combined effects of hydrostatic pressure and temperature on donor impurity binding energy in GaAs/Ga0.7Al0.3As double quantum well in the presence of the electric and magnetic fields which are applied along the growth direction have been studied by using a variational technique within the effective-mass approximation. The results show that an increment in temperature results in a decrement in donor impurity binding energy while an increment in the pressure for the same temperature enhances the binding energy and the pressure effects on donor binding energy are lower than those due to the magnetic field. (C) 2008 Elsevier B.V. All rights reserved.