Improvement in efficiency of yellow Light Emitting Diode using InGaN barriers and modified electron injection layer

Ahmad S., Kumar S., KAYA S., Alvi P. A., Siddiqui M. J.

OPTIK, cilt.206, 2020 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 206
  • Basım Tarihi: 2020
  • Doi Numarası: 10.1016/j.ijleo.2019.163716
  • Dergi Adı: OPTIK
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Communication Abstracts, Compendex, INSPEC
  • Anahtar Kelimeler: LED, Efficiency droop, phosphor-less LEDs, EBL, Yellow LED, InGaN LED, STRAIN PROFILE, GAN, TEMPERATURE, LEDS
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

InGaN based MQW-LEDs (Multiple Quantum Well Light Emitting Diodes) are now the new generation of light sources for displays and general lightening applications. The efficiency of blue InGaN LEDs has been matured very much ( > 80%), but efficiency of yellow LEDs based on InGaN quantum wells still lags behind. In this paper, we have proposed a new structure for yellow LEDs based on InGaN MQW to increase the efficiency of these LEDs. A simulation approach has been used to model and simulate MQW yellow LED based on InGaN quantum wells by using k.p theory. The simulation results show that the proposed structure provides much better output characteristics than the conventional structure. Using the proposed structure, about 18% increment in internal quantum efficiency (IQE) and a decrease of about 36% in efficiency droop of the yellow LED has been successfully achieved.