GAZI UNIVERSITY JOURNAL OF SCIENCE, cilt.34, ss.1179-1191, 2021 (ESCI)
Optical properties of GaAs/AlxGa1-xAs superlattice are studied dependent on quantum well
thickness of gain region and doping density of injector layers underperformed electric field.
Conduction band alignment of the superlattice is obtained by using effective mass approximation.
1d-Schrodinger formula is solved by using FDM. Intersubband transition energies, linear
(nonlinear and total) absorption coefficients and linear (nonlinear and total) refractive index
changes are plotted under applied electric field intensity. Intersubband transition energy of
electron from second excited state to first excited state shows 147 meV. It is found that -45 kV/cm
electric field intensity and 5 nm layer thickness of last quantum well of the gain region are the
best values for studied structure. After that, linear absorption coefficient is investigated dependent
on carrier number in the injector region under electric field. It is found that carrier number over
5 𝑥 1016 𝑐𝑚−2
can causes huge internal absorption of the radiative emission obtained in gain
region due to increase in linear absorption coefficient by factor 10. As a conclusion, total
absorption coefficient and total refractive index change are calculated for optimized parameters.