Binding energies of shallow donor impurities in different shaped quantum wells under an applied electric field

Kasapoglu E., Sari H., Sokmen I.

PHYSICA B-CONDENSED MATTER, cilt.339, sa.1, ss.17-22, 2003 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 339 Sayı: 1
  • Basım Tarihi: 2003
  • Doi Numarası: 10.1016/s0921-4526(03)00445-9
  • Dergi Adı: PHYSICA B-CONDENSED MATTER
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.17-22
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

We present a variational method to compute the binding energies for a hydrogenic impurity located at the center of the finite parabolic (PQW), V-shaped (VQW or full graded well) and square (SQW) GaAs-Ga1-xAlxAs quantum wells under the electric field. The dependence of the ground state impurity binding energy on the applied electric field, the geometric shape of the quantum wells and well width is discussed together with the polarization effect. (C) 2003 Elsevier B.V. All rights reserved.