Akademik Veri Yönetim Sistemi
European Physical Journal Plus, cilt.139, sa.10, 2024 (SCI-Expanded)
This study explores the high harmonic generations in GaAs/AlxGa1-xAs asymmetric coupled cylindrical quantum well wires (CCQWWs) under varying intense laser fields (ILFs). The structural parameters and theoretical framework are detailed, including the Schrödinger equation for the CCQWW heterojunction and the Floquet method to model ILF effects. Numerical simulations reveal alterations in the confinement potential and energy states of CCQWWs with increasing ILF intensity. Notably, significant changes occur in the potential well shape, influencing the localization of energy states. Transition energies and dipole moment matrix elements are analyzed, highlighting shifts in resonance peaks and their intensities. The study identifies blue-shift points at α0 (ILF parameter) values of 4.4 nm, 4.7 nm, and 3.7 nm for transition energies E21, E31/2, and E41/3, respectively, followed by red-shift trends as α0 increases further. Maximum enhancements are observed in the second harmonic generation coefficient at ILF α0 = 6 nm and the third harmonic generation coefficient at α0 = 8 nm, which is 1000 times higher than at α0 = 0 nm. These findings underscore the potential for enhancing semiconductor device production through optimized ILF induced high harmonic generation. Graphical abstract: (Figure presented.)