Structural and electrical properties of nitrogen-doped ZnO thin films


Tuzemen E. , Kara K., ELAGÖZ S. , TAKCI D. K. , ALTUNTAŞ İ. , ESEN R.

APPLIED SURFACE SCIENCE, cilt.318, ss.157-163, 2014 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 318
  • Basım Tarihi: 2014
  • Doi Numarası: 10.1016/j.apsusc.2014.02.118
  • Dergi Adı: APPLIED SURFACE SCIENCE
  • Sayfa Sayıları: ss.157-163

Özet

ZnO and nitrogen-doped ZnO thin films were prepared onto glass substrate by pulsed filtered cathodic vacuum arc deposition (PFCVAD) system at room temperature. The influence of doping on the structural, electrical and optical properties of thin films was investigated. XRD studies were carried out to analyze and compare the structural quality of undoped and nitrogen-doped ZnO films. Raman measurement was performed to study the doping effects in the ZnO. The optical transmittances of all films are studied as a function of wavelength using UV-VIS-NIR spectrophotometer. The optical band gap values of the films are found using absorbance spectrums. The electrical studies for the films are carried out by using Hall-effect measurements. (C) 2014 Elsevier B.V. All rights reserved.