Comparison of N-doped ZnO and N-Al codoped ZnO thin films deposited by pulsed filtered cathodic vacuum arc deposition

Tuzemen E., Kara K., Takci D. K., Esen R.

INDIAN JOURNAL OF PHYSICS, cilt.89, sa.4, ss.337-345, 2015 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 89 Sayı: 4
  • Basım Tarihi: 2015
  • Doi Numarası: 10.1007/s12648-014-0569-4
  • Dergi Adı: INDIAN JOURNAL OF PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.337-345
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

N-doped ZnO and N-Al codoped ZnO films are deposited onto glass substrate at room temperature by pulsed filtered cathodic vacuum arc deposition system. The films are characterized by X-ray diffraction, Raman spectra, UV-Vis-NIR spectrophotometer, atomic force microscopy (AFM) and Hall measurements. Films are textured along the (002) direction. AFM images reveal that surface of N-Al codoped ZnO film grown at RT is smoother than that of the N-doped ZnO (ZnO:N) film. Optical band gap of the N-Al codoped ZnO film is higher than that of N-doped ZnO (ZnO: N) film. When N-Al codoped ZnO film is compared to N-doped ZnO film, it is revealed that N-Al codoped ZnO film has a lower hole mobility of 18 cm(2)/V s, a higher hole concentration of 1.205 x 10(19) cm(-3) and thus a lower electrical resistivity of 2.730 x 10(-2) ohm cm.