The self-consistent calculation of Si delta-doped GaAs structures


Ozturk E. , Ergun Y., Sari H. , Sokmen I.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, vol.73, no.6, pp.749-754, 2001 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 73 Issue: 6
  • Publication Date: 2001
  • Doi Number: 10.1007/s003390100857
  • Title of Journal : APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
  • Page Numbers: pp.749-754

Abstract

In this study, we report results of a self-consistent calculation obtained for the sub-band structure of Si delta -doped GaAs material by using a new alternative method. We will discuss the influence of the delta -doping concentration and the delta -layer thickness on the sub-band structure for a non-uniform distribution, which is taken as different from the known Gaussian distribution. The confining potential, the sub-band energies, the sub-band occupations, and the Fermi energy have been calculated by solving the Schrodinger and Poisson equations by using the Airy functions self-consistently.