The self-consistent calculation of Si delta-doped GaAs structures

Ozturk E., Ergun Y., Sari H., Sokmen I.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, cilt.73, sa.6, ss.749-754, 2001 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 73 Sayı: 6
  • Basım Tarihi: 2001
  • Doi Numarası: 10.1007/s003390100857
  • Dergi Adı: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.749-754
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

In this study, we report results of a self-consistent calculation obtained for the sub-band structure of Si delta -doped GaAs material by using a new alternative method. We will discuss the influence of the delta -doping concentration and the delta -layer thickness on the sub-band structure for a non-uniform distribution, which is taken as different from the known Gaussian distribution. The confining potential, the sub-band energies, the sub-band occupations, and the Fermi energy have been calculated by solving the Schrodinger and Poisson equations by using the Airy functions self-consistently.