The influence of TMGa pre-flow time and amount as surfactant on the structural and optical properties of AlN epilayer

Yolcu G., Simsek I., Kekul R., Altuntaş İ., Horoz S., Demir İ.

MICRO AND NANOSTRUCTURES, cilt.168, 2022 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 168
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1016/j.micrna.2022.207301
  • Dergi Adı: MICRO AND NANOSTRUCTURES
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED)
  • Anahtar Kelimeler: AlN, Characterization, MOVPE, TMGapre-flowtime, amount, HIGH-QUALITY, SAPPHIRE SUBSTRATE, EPITAXIAL LAYER, GAN GROWTH, TEMPLATES
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

AIN is used as a template layer for deep UV (DUV) emitter and detector applications, because of its wide bandgap and high thermal conductivity. In this study, trimethylgallium (TMGa) source is used as surfactant to improve crystal quality and decrease dislocation density (DD) of AlN layers grown on sapphire (Al2O3) substrate surfaces by Metal Organic Vapor Phase Epitaxy (MOVPE) system. TMGa pre-flow time and pre-flow amount that TMGa pre-flow to the nucleation stage are the subjects of two distinct optimization studies. The structural and optical properties of grown AIN are examined by a high resolution X-ray diffractometer (HR-XRD), Raman spectroscopy, and UV???Vis???NIR spectrophotometer, respectively. TMGa pre-flow time and TMGa pre-flow amount determined to obtain high crystal quality AlN epilayers are 2 s and 0.446 ?? 10-5 mol/min, respectively. HR-XRD investigation of these growths yields FWHM values of 159/2718 arcsec and 201/1550 arcsec for the ?? (002) and ?? (102) scans, respectively.