In this study, the influence of structure parameter (eta) and intense laser field (ILF) on the optical properties such as the nonlinear optical rectification (NOR) coefficient, second and third harmonic generation (SHG and THG) coefficients related to intersubband transitions in a quantum well with Morse confinement potential are theoretically studied. The energy levels and corresponding wave functions of the system are obtained by solving the one-electron Hamiltonian within the framework of the effective-mass, parabolic-band approximations and Kramers-Henneberger (KH) transformation. The optical properties of the structure are calculated through the compact density matrix approach. Numerical calculations are brought out for a typical GaAs quantum well. The results unveil significant influences of ILF and structure parameters of Morse confinement potential on resonant peak position and peak intensity of the NOR, SHG and THG coefficients.