Arsine Flow Rate Effect on the Low Growth Rate Epitaxial InGaAs Layers

Demir I., Altuntas İ., Elagoz S.

SEMICONDUCTORS, cilt.55, sa.10, ss.816-822, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 55 Sayı: 10
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1134/s1063782621100079
  • Dergi Adı: SEMICONDUCTORS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Chemical Abstracts Core, INSPEC
  • Sayfa Sayıları: ss.816-822
  • Anahtar Kelimeler: InGaAs, metal organic vapor phase epitaxy, arsine, V, III ratio, thin film, QUANTUM-WELLS, V/III RATIO, LASER, TEMPERATURE, INALAS, GAAS
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

Effect of arsine (AsH3) flow rate on epitaxially grown unintentionally doped and low-growth rate InGaAs layer by using metal organic vapor phase epitaxy at growth temperature 640 degrees C are investigated. While all other sources and parameters are kept constant during growth, the AsH3 flow rate in InGaAs layer is increased from 20 to 120 sccm. The epitaxial grown InGaAs layers have been characterized by optical microscopy, X-ray diffraction, photoluminescence, and Hall effect. It is found that the mobility of carriers increases from 3780 to 7043 cm(2)/Vs, sheet carrier density decreases from 7.74 x 10(11) to 4.01 x 10(11) cm(-2), PL intensity of emission increases from 1.1 to 8.6 V by increasing the AsH3 flow rate from 20 to 40 sccm. Moreover, the same trend of improvement is observed on the crystalline quality of InGaAs layers with changing of AsH3 flow rate. The changing of AsH3 flow rate between 20 and 120 sccm is found to have strong effect on properties of epitaxial InGaAs alloys.