ABC method analysis for the Capacitance Voltage characteristic of Ni n GaAS In schottky barrier diode

DOĞAN H., KOÇKANAT S., ÜNSAL ÇELİMLİ D. B.

12th International Nanoscience and Nanotechnology Conference, 3 - 05 June 2016, (Full Text)

• Publication Type: Conference Paper / Full Text
• Sivas Cumhuriyet University Affiliated: Yes