Influence of temperature on the electronic properties of Si delta-doped GaAs structures

Creative Commons License

Ozturk E., Ergun Y., Sari H., Sokmen I.

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, cilt.21, sa.2, ss.97-101, 2003 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 21 Sayı: 2
  • Basım Tarihi: 2003
  • Doi Numarası: 10.1051/epjap:2002111
  • Dergi Adı: EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.97-101
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

We have investigated theoretically the electronic structure of Si delta-doped GaAs layers at T = 0 K and at room temperature. For a nonuniform distribution, we have studied their sensitivity to the donor concentration and the donor thickness. In this study, nonuniform distribution is different from Gaussian distribution used by other authors. From the self-consistent calculation, we have seen that at room temperature carriers which appear due to the impurity atoms are more efficient than temperature on the subband structure.