Intersubband transitions for single, double and triple Si delta-doped GaAs layers


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Ozturk E. , Sokmen I.

JOURNAL OF PHYSICS D-APPLIED PHYSICS, cilt.36, ss.2457-2464, 2003 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 36 Konu: 20
  • Basım Tarihi: 2003
  • Doi Numarası: 10.1088/0022-3727/36/20/006
  • Dergi Adı: JOURNAL OF PHYSICS D-APPLIED PHYSICS
  • Sayfa Sayıları: ss.2457-2464

Özet

The intersubband transitions in single, double and triple Si delta-doped GaAs structures are theoretically studied for different applied electric fields. Electronic properties such as the confining potential, the subband energies and the eigen envelope wave functions have been calculated by solving the Schrodinger and Poisson equations self-consistently. We have seen that the intersubband transitions are very sensitive to the type of structure and are dependent on the applied electric field. The electric field and structure dependence of the intersubband optical absorption is interesting for potential device applications in a class of photodetectors and optical modulators.