Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells


Ungan F. , Yesilgul U., Sakiroglu S., Kasapoglu E. , Sari H. , Sokmen I.

PHYSICS LETTERS A, cilt.374, ss.2980-2984, 2010 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 374 Konu: 29
  • Basım Tarihi: 2010
  • Doi Numarası: 10.1016/j.physleta.2010.05.020
  • Dergi Adı: PHYSICS LETTERS A
  • Sayfa Sayıları: ss.2980-2984

Özet

Within the framework of effective-mass approximation, using a variational method, the effect of high-frequency laser field on intersubband transitions and the binding energy of shallow-donor impurities in a semiconductor quantum well are investigated. We have found that the increase of the laser-dressing parameter leads to important effects on the electronic and optical properties of a quantum well. This gives a new degree of freedom in various device applications based on the intersubband transition of electrons. (C) 2010 Elsevier B.V. All rights reserved.