Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells

Ungan F., Yesilgul U., Sakiroglu S., Kasapoglu E., Sari H., Sokmen I.

PHYSICS LETTERS A, cilt.374, sa.29, ss.2980-2984, 2010 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 374 Sayı: 29
  • Basım Tarihi: 2010
  • Doi Numarası: 10.1016/j.physleta.2010.05.020
  • Dergi Adı: PHYSICS LETTERS A
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.2980-2984
  • Anahtar Kelimeler: Intense laser field, Intersubband transitions, Impurity binding energy, CARRIER MAGNETIC SEMICONDUCTORS, APPLIED ELECTRIC-FIELD, LO-PHONON INSTABILITY, OPTICAL-ABSORPTION, DONOR IMPURITIES, RADIATION-FIELDS, STATES, HETEROSTRUCTURES, DOTS, MOBILITY
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

Within the framework of effective-mass approximation, using a variational method, the effect of high-frequency laser field on intersubband transitions and the binding energy of shallow-donor impurities in a semiconductor quantum well are investigated. We have found that the increase of the laser-dressing parameter leads to important effects on the electronic and optical properties of a quantum well. This gives a new degree of freedom in various device applications based on the intersubband transition of electrons. (C) 2010 Elsevier B.V. All rights reserved.