Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells


Ungan F. , Yesilgul U., Sakiroglu S., Kasapoglu E. , Sari H. , Sokmen I.

PHYSICS LETTERS A, vol.374, no.29, pp.2980-2984, 2010 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 374 Issue: 29
  • Publication Date: 2010
  • Doi Number: 10.1016/j.physleta.2010.05.020
  • Title of Journal : PHYSICS LETTERS A
  • Page Numbers: pp.2980-2984

Abstract

Within the framework of effective-mass approximation, using a variational method, the effect of high-frequency laser field on intersubband transitions and the binding energy of shallow-donor impurities in a semiconductor quantum well are investigated. We have found that the increase of the laser-dressing parameter leads to important effects on the electronic and optical properties of a quantum well. This gives a new degree of freedom in various device applications based on the intersubband transition of electrons. (C) 2010 Elsevier B.V. All rights reserved.