Electronic structure of two coupled Si delta-doped GaAs as dependent on the donor thickness


Ozturk E. , Ergun Y., Sari H. , Sokmen I.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, cilt.77, ss.427-431, 2003 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 77
  • Basım Tarihi: 2003
  • Doi Numarası: 10.1007/s00339-002-1484-7
  • Dergi Adı: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
  • Sayfa Sayıları: ss.427-431

Özet

For the uniform distribution we have theoretically investigated the influence of donor thickness on two coupled Si delta-doped GaAs structure, at T=0 K. Electronic structure have been calculated by solving the Schrodinger and Poisson equations self-consistently. We thus find the confining potential, the electronic density, the subband energies and their eigen envelope functions, the subband occupations and Fermi energy. From the self-consistent calculation, we have seen that the effective potential profile and the electronic density of two coupled Si delta-doped GaAs structure are sensitive to the donor thickness while the subband energies and the subband occupations are not sensitive to the donor thickness .