Electronic structure of two coupled Si delta-doped GaAs as dependent on the donor thickness


Ozturk E. , Ergun Y., Sari H. , Sokmen I.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, vol.77, pp.427-431, 2003 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 77
  • Publication Date: 2003
  • Doi Number: 10.1007/s00339-002-1484-7
  • Title of Journal : APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
  • Page Numbers: pp.427-431

Abstract

For the uniform distribution we have theoretically investigated the influence of donor thickness on two coupled Si delta-doped GaAs structure, at T=0 K. Electronic structure have been calculated by solving the Schrodinger and Poisson equations self-consistently. We thus find the confining potential, the electronic density, the subband energies and their eigen envelope functions, the subband occupations and Fermi energy. From the self-consistent calculation, we have seen that the effective potential profile and the electronic density of two coupled Si delta-doped GaAs structure are sensitive to the donor thickness while the subband energies and the subband occupations are not sensitive to the donor thickness .