Electronic structure of two coupled Si delta-doped GaAs as dependent on the donor thickness

Ozturk, EMİNE; Ergun, Y; Sari, HÜSEYİN; Sokmen, I

doi:10.1007/s00339-002-1484-7

Electronic structure of two coupled Si delta-doped GaAs as dependent on the donor thickness

Atıf İçin Kopyala

Ozturk E., Ergun Y., Sari H., Sokmen I.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, cilt.77, ss.427-431, 2003 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 77
Basım Tarihi: 2003
Doi Numarası: 10.1007/s00339-002-1484-7
Dergi Adı: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.427-431
Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

For the uniform distribution we have theoretically investigated the influence of donor thickness on two coupled Si delta-doped GaAs structure, at T=0 K. Electronic structure have been calculated by solving the Schrodinger and Poisson equations self-consistently. We thus find the confining potential, the electronic density, the subband energies and their eigen envelope functions, the subband occupations and Fermi energy. From the self-consistent calculation, we have seen that the effective potential profile and the electronic density of two coupled Si delta-doped GaAs structure are sensitive to the donor thickness while the subband energies and the subband occupations are not sensitive to the donor thickness .