Hydrostatic Pressure and Temperature Effect on the Electron-Related Optical Responses in Symmetric and Asymmetric n-Type Double Delta-Doped GaAs Quantum Well Under Terahertz Laser Field

Ungan F., Mora-Ramos M. E., Sari H., Sokmen I.

JOURNAL OF ELECTRONIC MATERIALS, cilt.48, sa.6, ss.3537-3546, 2019 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 48 Sayı: 6
  • Basım Tarihi: 2019
  • Doi Numarası: 10.1007/s11664-019-07102-z
  • Dergi Adı: JOURNAL OF ELECTRONIC MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.3537-3546
  • Anahtar Kelimeler: Delta-doped quantum well, optical response, intense laser field, hydrostatic pressure, INTERSUBBAND TRANSITION, CONDUCTION-BAND, ABSORPTION, SI, SUPERLATTICES, SPECTRUM, MOBILITY, ENERGY, MODEL, INAS
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

The effects of non-resonant intense laser fields on the intersubband-related light absorption and relative refractive index change coefficients in symmetric and asymmetric n-type double -doped GaAs quantum wells are investigated. Systems are assumed to be also under the influence of hydrostatic pressure and the change of temperature. The single band effective-mass and envelope function approximations, together with analytical expressions for the linear and third-order nonlinear optical coefficients are used as theoretical tools. According to the numerical outcome, the nonlinear optical response is significantly affected by the intense non-resonant laser radiation, as a result of the associated distortion of conduction band energy profiles. For instance, it is revealed there is a laser-induced transition of the confining potential from double-delta geometry to single-triangular-like shape. Given the additional variations associated with the application of hydrostatic pressure and temperature, all these external probes could be used to control and suitablly tune the electronic and optical properties of GaAs n-type double -doped GaAs quantum wells.