Effect of Si-doped and undoped inter-layer transition time on the strain-compensated InGaAs/InAlAs QCL active region grown with MOVPE

Perkitel I., DEMİR İ.

Journal of Molecular Structure, cilt.1272, 2023 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 1272
  • Basım Tarihi: 2023
  • Doi Numarası: 10.1016/j.molstruc.2022.134203
  • Dergi Adı: Journal of Molecular Structure
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Chemical Abstracts Core, INSPEC
  • Anahtar Kelimeler: QCL, MOVPE, XRD, in-situ reflectance, thickness sensitivity
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

© 2022 Elsevier B.V.In this study, we report the effect of the combination of Si-doped and undoped inter-layer transition time in the strain compensated In0.67Ga0.33As/In0.36Al0.64As quantum cascade laser (QCL) structure grown on InP substrate by Metal Organic Vapor Phase Epitaxy (MOVPE). In situ reflectance spectroscopy and high resolution X-ray diffraction (HRXRD) technique have been used for the analysis of growth steps and crystalline quality of QCL structures, respectively. In addition, since thickness accuracy is very important for QCLs, two different thickness calculation methods have been used in the Global Fit simulation program for detailed thickness accuracy of structures. As a result, optimum values for thickness accuracy have been obtained as 5 and 10 s between undoped and Si-doped layers, respectively, as verified by the two methods.