Subband structure of p-type delta-doped GaAs as dependent on the acceptor concentration and the layer thickness


Ozturk E. , Bahar M. K. , Sokmen I.

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, vol.41, no.3, pp.195-200, 2008 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Review
  • Volume: 41 Issue: 3
  • Publication Date: 2008
  • Doi Number: 10.1051/epjap:2008018
  • Title of Journal : EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
  • Page Numbers: pp.195-200

Abstract

For a uniform distribution we have theoretically studied the subband structure of p-type delta-doped GaAs inserted into a quantum well at T = 0 K. We will investigate the influence of the delta-doping concentration and the layer thickness. The electronic properties such as the depth of con. ning potential, the density pro. le, the Fermi level, the subband energies and the subband populations have been calculated by solving the Schrodinger and Poisson equations self consistently. In this study, we have seen that the heavy-hole subbands contain many more energy states than the light-hole ones, the population of the heavy-hole levels represent approximately 91% of all the carriers.