Subband structure of p-type delta-doped GaAs as dependent on the acceptor concentration and the layer thickness

Ozturk E., Bahar M. K., Sokmen I.

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, cilt.41, sa.3, ss.195-200, 2008 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Derleme
  • Cilt numarası: 41 Sayı: 3
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1051/epjap:2008018
  • Dergi Adı: EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.195-200
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

For a uniform distribution we have theoretically studied the subband structure of p-type delta-doped GaAs inserted into a quantum well at T = 0 K. We will investigate the influence of the delta-doping concentration and the layer thickness. The electronic properties such as the depth of con. ning potential, the density pro. le, the Fermi level, the subband energies and the subband populations have been calculated by solving the Schrodinger and Poisson equations self consistently. In this study, we have seen that the heavy-hole subbands contain many more energy states than the light-hole ones, the population of the heavy-hole levels represent approximately 91% of all the carriers.