The effect of the intense laser field on the intersubband transitions in Ga1-xInxNyAs1-y/GaAs single quantum well

Ungan, FATİH; Kasapoglu, ESİN; Duque, C.; Sari, HÜSEYİN; Sokmen, I.

doi:10.1016/j.physe.2011.10.002

The effect of the intense laser field on the intersubband transitions in Ga1-xInxNyAs1-y/GaAs single quantum well

Atıf İçin Kopyala

Ungan F., Kasapoglu E., Duque C. A., Sari H., Sokmen I.

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, cilt.44, sa.2, ss.515-520, 2011 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 44 Sayı: 2
Basım Tarihi: 2011
Doi Numarası: 10.1016/j.physe.2011.10.002
Dergi Adı: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.515-520
Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

The effect of the intense laser field on the intersubband optical absorption for (1-2) transition in a Ga1-xInxNyAs1-y/GaAs single quantum well for different nitrogen and indium concentrations is investigated. The numerical calculations are performed in the effective-mass approximation. We have found that the increase of the nitrogen and indium concentrations with intense laser field leads to important effects on the optical properties of a quantum well. The obtained results show that the desired energy range corresponding to the subbands may be tuned by changing the laser intensity and the nitrogen and indium concentrations. This tunability gives a possibility for near-infrared electro-absorption modulators and quantum well infrared detectors. (C) 2011 Elsevier B.V. All rights reserved.