Makaleler
25
Tümü (25)
SCI-E, SSCI, AHCI (21)
SCI-E, SSCI, AHCI, ESCI (22)
ESCI (1)
Scopus (21)
TRDizin (3)
Diğer Yayınlar (1)
9. Effect of quantum barrier height on the linear and nonlinear optical properties of GaAs/AlGaAs Quantum Well
Teknik Meslek Yüksekokulları Akademik Araştırma Dergisi
, cilt.1, sa.1, ss.27-30, 2022 (Hakemli Dergi)
16. Characterization of multilayer Al doping in ZnO
JOURNAL OF THE AUSTRALIAN CERAMIC SOCIETY
, cilt.57, sa.4, ss.1039-1047, 2021 (SCI-Expanded, Scopus)
Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler
48
11. Optical Properties of Semi-Elliptical InAs Quantum Dots
9TH INTERNATIONAL ADVANCED TECHNOLOGIES SYMPOSIUM (IATS'21), Türkiye, 27 Ekim 2021, (Özet Bildiri)
28. Growth and characterization of grown optical pumped VCSEL
International Eurasian Conference on Science, Engineering and Technology (EurasianSciEnTech 2018), 22 - 23 Kasım 2018, (Özet Bildiri)
29. Effect of LT-GaN Thickness on the Structural Properties of GaN Grown On PSS by Mocvd
2nd International Mediterranean Science And Engineering Congress, 25 - 27 Ekim 2017, (Özet Bildiri)
30. Modelling Highly Reflective AlAs1-xPx/GaAs Dbr Structure
Internatonal Conference On Condensed Matter And Material Sciences, 11 - 15 Ekim 2017, (Özet Bildiri)
31. Simulation Of GaAs Based DBR Structures For VCSEL Application
International Conference On Condensed Matter And Material Sciences, 11 - 15 Ekim 2017, (Özet Bildiri)
32. Investigation of ZnO based Distributed Bragg Reflectors (DBRs) by using Transfer Matrix Method
4th INTERNATIONAL CONFERENCE ON MATERIALS SCIENCE AND NANOTECHNOLOGY FOR NEXT GENERATION, 28 - 30 Haziran 2017, (Özet Bildiri)
33. Simulation of Highly Reflective GaN/AlxGa1-xN DBR Structure for UV-Blue LEDs
4th INTERNATIONAL CONFERENCE ON MATERIALS SCIENCE AND NANOTECHNOLOGY FOR NEXT GENERATION (MSNG2017), 28 - 01 Haziran 2017, (Özet Bildiri)
34. Modelling of Highly Reflective GaAs/AlxGa1-xAs DBR Structure for 980 nm VCSELs
4th INTERNATIONAL CONFERENCE ON MATERIALS SCIENCE AND NANOTECHNOLOGY FOR NEXT GENERATION (MSNG2017), 28 - 30 Haziran 2017, (Özet Bildiri)
35. High Quality InGaAs InAlAs Superlattices Growth by MOCVD
3th International Nanoscience and Nanotechnolgy for Next Generation, 20 - 23 Ekim 2016
37. Growth And Characterization Of High Aluminium Alloy Concentration (x=0.92-0.94) AlxGa1-xAs for Optoelectronic Application
Tfd 32, International Physics Congree, 6 - 09 Eylül 2016, (Özet Bildiri)
38. V III Ratio Effect on Electrical and Optical Properties of Nearly Lattice Matched InxGa1 xAs Epilayers on InP
Turkish Physical Society 32nd International Physics Congress, Muğla, Türkiye, 6 - 09 Eylül 2016
39. V/III Ratio Effect on Electrical and Optical Properties of Nearly Lattice Matched InxGa1-xAs Epilayers on InP
Turkish Physical Society 32nd International Physics Congress, 6 - 09 Eylül 2016, (Özet Bildiri)
40. Growth And Characterization of High Aluminium Alloy Concentration x 0 9 AlxGa1 xAs for Optoelectronic Application
Turkish Physical Society 32nd International Physics Congress, Muğla, Türkiye, 6 - 09 Eylül 2016
41. Optıcal And Structural Propertıes Of Lattice Matched And Sligthly Lattıce Mismatched Mocvd Grown InxGa1-xAs Epilayers
IBWAP 2016, 7 - 09 Temmuz 2016, (Özet Bildiri)
42. Optical and Structural Properties of Lattice Matched and Slightly Lattice Mismatched MOCVD Grown InxGa1 x Epilayers
16th International Balkan Workshop on Applied Physics and Materials Science (IBWAP 2016), Constanta, Romanya, 7 - 09 Temmuz 2016
43. Research For Optimizing Growth Conditions Of Gallium Nitride Epilayers for Blue Led Stuructures Grown by Mocvd
9th International Physics Conference Of The Balkan Physical Union, 25 - 28 Ağustos 2015, (Özet Bildiri)
44. Mocvd Ile Büyütülen Ge/gaas Non-polar-polar Yapısının Yüksek Çözünürlüklü X-ışını Kırınımıyla Ve Yapısal Karakterizasyonu
Adım Fizik Günleri, 17 - 18 Nisan 2014, (Özet Bildiri)
45. Epitaxial Growth by Metal Organic Chemical Vapor Deposition MOCVD and Structural Characterization of GaAs Films on Ge Substrates
NanoTR 9, 24 - 28 Temmuz 2013, (Tam Metin Bildiri)
46. The effect of growth rate with constant V/III ratio to the crystal quality of GaAs grown by MOCVD
9th Nanoscience and Nanotechnology Conference (Nano TR-9), 24 Haziran 2013 - 28 Haziran 2018, (Özet Bildiri)
47. EPİTAXİAL GROWTH BY METAL ORGANİC VAPOR DEPOSİTİON (MOCVD) AND STRUCTURAL CHARACTERİZATİON OF GAAS FİLMS ON GE SUBSTRATES
Nano-tr 9, Erzurum, Türkiye, 28 Haziran 2013, (Özet Bildiri)
48. SPECULAR REFLECTANCE SPECTRA OF GAAS ON GE SUBSTRATES GROWN BY MOCVD
Nano-tr 9, Erzurum, Türkiye, 24 Haziran 2013, (Özet Bildiri)
Kitaplar
1
1. Mikrodenetleyici Tabanlı CNC Kontrolü ve Düşük Güçlü Lazer Tasarımı
Endüstride Dijitalleşme Örnekleri, Dr. Öğr. Üyesi Serkan GÜLDAL, Editör, İksad Yayınevi, Ankara, ss.111-124, 2022