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66
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Kuantum Çağlayan Lazerler
Matematiksel Fizikte Özel Konular
Yüksek Lisans
Yüksek Lisans
Uzmanlık Alan Dersi
Seminer Dersi
Nanofotonik
Nanoaygıt Fiziğine Giriş
Uzmanlık Alan Dersi
Seminer Dersi
Lisans
Lisans
Kuantum Fiziği - II (İngilizce)
Katı Hal Fiziği (İngilizce)
Modern Fizik (İngilizce)
Mühendisler için Karmaşık Analiz (İngilizce)
Kuantum Fiziği - I (İngilizce)
Mühendisler için Olasılık ve İstatistik(İng)
İngilizce Hazırlık
Nanobilim ve Nanoteknolojiye Giriş (İngilizce)
Elektromagnetik Dalga Teorisi
Elektrik Elektronik Müh. Malzeme Bilgisi
Elektromagnetik Dalga Teorisi
Elektrik Elektronik Müh. Malzeme Bilgisi
Kuantum Fiziği I
Kuantum Fizigi II
Kuantum Fizigi II
Elektromagnetik Alan Teorisi
Fizik Lab. II
Elektromagnetik Alan Teorisi
Fizik Lab. III (Elek. Ve Man.)
Kuantum Fiziği I
Fizik Lab. III (Elek. Ve Man.)
Fizik - I
Fizik Lab.Iv (Elek.Man.Dal.Ve Optik)
Fizik - I
Fizik IV (Elek.Man.Dal.Ve Op.)
Fizik IV (Elek.Man.Dal.Ve Op.)
Fizik IV (E.M.Dal. ve O.)
Fizik IV (E.M.Dal. ve O.)
Klasik Mekanik
Klasik Mekanik
Fizik Lab. V ( Elektronik)
Fizik Lab. V ( Elektronik)
Genel Fizik I
Genel Fizik I
Malzeme Bilgisi
Genel Fizik II
Fizik Lab.I
Bitirme Tezi
Bitirme Tezi
Fizik Lab.Iv (Elek.Man.Dal.Ve Optik)
Fizik III (Elk.Ve Mag.)
Fizik III (Elk.Ve Mag.)
İstatistik Fizik
Fizik-I
Fizik-I
Makaleler
Tümü (19)
SCI-E, SSCI, AHCI (11)
SCI-E, SSCI, AHCI, ESCI (13)
ESCI (2)
Scopus (13)
TRDizin (4)
Diğer Yayınlar (3)
2024
20241. A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality
demir m., ELAGÖZ S.
Cumhuriyet Science Journal
, cilt.45, sa.2, ss.400-406, 2024 (Hakemli Dergi)
2021
20212. The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures
ALTUNTAŞ İ., ELAGÖZ S.
International Journal of Innovative Engineering Applications
, cilt.5, sa.1, ss.6-10, 2021 (Hakemli Dergi)
2020
20203. Influences of thickness and temperature of low temperature GaAs buffer layer on two-step MOVPE grown GaAs/Ge heterostructures
DEMİR İ., KASAPOĞLU A. E., BUDAK H. F., GÜR E., Elagoz S.
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
, cilt.90, sa.2, 2020 (SCI-Expanded, Scopus)
2019
20194. AlGaN/AlN MOVPE heteroepitaxy: pulsed co-doping SiH4 and TMIn
DEMİR İ., Kocak Y., KASAPOĞLU A. E., Razeghi M., GÜR E., Elagoz S.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
, cilt.34, sa.7, 2019 (SCI-Expanded, Scopus)
2019
20195. High brightness ultraviolet light-emitting diodes grown on patterned silicon substrate
Robin Y., Ding K., DEMİR İ., McClintock R., ELAGÖZ S., Razeghi M.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
, cilt.90, ss.87-91, 2019 (SCI-Expanded)
2018
20186. Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications
DEMİR İ., ALTUNTAŞ İ., Bulut B., Ezzedini M., ERGÜN Y., ELAGÖZ S.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
, cilt.33, sa.5, 2018 (SCI-Expanded, Scopus)
2018
20187. The effects of two-stage HT-GaN growth with different V/III ratios during 3D-2D transition
ALTUNTAŞ İ., DEMİR İ., KASAPOĞLU A. E., Mobtakeri S., GÜR E., ELAGÖZ S.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
, cilt.51, sa.3, 2018 (SCI-Expanded)
2017
20178. V/III ratio effects on high quality InAlAs for quantum cascade laser structures
DEMİR İ., ELAGÖZ S.
SUPERLATTICES AND MICROSTRUCTURES
, cilt.104, ss.140-148, 2017 (SCI-Expanded)
2017
20179. Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy
Demir İ., Robin Y., McClintock R., ELAGÖZ S., Zekentes K., Razeghi M.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
, cilt.214, sa.4, 2017 (SCI-Expanded)
2016
201610. Interruption time effects on InGaAs/InAlAs superlattices of quantum cascade laser structures grown by MOCVD
DEMİR İ., ELAGÖZ S.
SUPERLATTICES AND MICROSTRUCTURES
, cilt.100, ss.723-729, 2016 (SCI-Expanded)
2016
201611. Growth of InGaAs/InAlAs superlattices by MOCVD and precise thickness determination via HRXRD
Demir İ., ELAGÖZ S.
GAZI UNIVERSITY JOURNAL OF SCIENCE
, cilt.29, sa.4, ss.947-951, 2016 (ESCI)
2015
201512. Capacitance-conductance-frequency characteristics of Au/Ni/n-GaN/undoped GaN Structures
Doğan H., Yıldırım N., Orak I., Elagöz S., Türüt A.
PHYSICA B-CONDENSED MATTER
, cilt.457, ss.48-53, 2015 (SCI-Expanded, Scopus)
2014
201413. Structural and electrical properties of nitrogen-doped ZnO thin films
Tuzemen E., Kara K., ELAGÖZ S., TAKCI D. K., ALTUNTAŞ İ., ESEN R.
APPLIED SURFACE SCIENCE
, cilt.318, ss.157-163, 2014 (SCI-Expanded)
2014
201414. Temperature-dependent electrical transport properties of (Au/Ni)/n-GaN Schottky barrier diodes
Doğan H., Elagöz S.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
, cilt.63, ss.186-192, 2014 (SCI-Expanded, Scopus)
2014
201415. XRD XPS and optical characterizations of Al doped ZnO film grown on GaAs substrate
ŞENADIM TÜZEMEN E., Şahin H., KARA K., ELAGÖZ S., ESEN R.
TURKISH JOURNAL OF PHYSICS
, cilt.38, ss.111-117, 2014 (ESCI)
2013
201316. Effects of Annealing on Reflectance of ZnO Grown by PFCVAD
ŞENADIM TÜZEMEN E., ELAGÖZ S., Şahin H., KARA K., ESEN R., Bulut A.
Marmara Üniversitesi Fen Bilimleri Dergisi , cilt.25, ss.41, 2013 (Hakemli Dergi)
2011
201117. In concentration dependence of shallow impurity binding energy under the hydrostatic pressure
BAŞER P., ALTUNTAŞ İ., ELAGÖZ S.
Marmara Üni fen bilimleri dergisi , cilt.23, sa.4, ss.171-180, 2011 (Hakemli Dergi)
2011
201118. In Concentration Dependence of Shallow Impurity Binding Enegry Under The Hydrostatic Pressure
BAŞER P., ALTUNTAŞ İ., ELAGÖZ S.
Marmara Üniversitesi Fen Bilimleri Dergisi , cilt.23, sa.4, ss.171-180, 2011 (Hakemli Dergi)
2008
200819. Çift parabolik kuşatma altında kuantum sistemi elektronik enerji düzeyleri
ELAGÖZ S., USLU O., BAŞER P.
Marmara Üni fen bilimleri dergisi , cilt.20, ss.1-12, 2008 (Hakemli Dergi)
Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler
2017
20171. The Effects of Two Stages GaN Growth with Different V/III Ratios During 3D-2D Transition
ALTUNTAŞ İ., DEMİR İ., ELAGÖZ S.
8th International Conference and Exhibition on LASERS, OPTICS PHOTONICS, Las Vegas, Amerika Birleşik Devletleri, 15 - 17 Kasım 2017, (Özet Bildiri)
2017
20172. High quality nitride materials (AlN and AlGaN) on Si and sapphire substrates and UV-LED applications
DEMİR İ., Li H., Robin Y., McClintock R., ALTUNTAŞ İ., ELAGÖZ S., et al.
8th International Conference and Exhibition on Lasers, Optics Photonics, LasVegas, Amerika Birleşik Devletleri, 15 - 17 Kasım 2017, cilt.4, ss.149, (Özet Bildiri)
2017
20173. POLYGONUM COGNATUM Meissn. VE FUNGUSLU ORTAMDA FARKLI BOYUTLARDA SENTEZLENEN GÜMÜŞ NANOPARTİKÜLLERİNİN (AgNP) ANTİMİKROBİYAL ÖZELLİKLERİNİN ARAŞTIRILMASI
GÜRSOY N., ELAGÖZ S., GÖLGE E., BULUT A., DEMİR T.
TARGİD 3. İç Anadolu Tarım ve Gıda Kongresi, 26 - 28 Ekim 2017, (Özet Bildiri)
2017
20174. Effect of LT-GaN Thickness on the Structural Properties of GaN Grown On PSS by Mocvd
ALTUN D., ALAYDİN B. Ö., Bulut B., Erkuş M., ELAGÖZ S.
2nd International Mediterranean Science And Engineering Congress, 25 - 27 Ekim 2017, (Özet Bildiri)
2017
20175. Modelling Highly Reflective AlAs1-xPx/GaAs Dbr Structure
ALAYDİN B. Ö., ŞENADIM TÜZEMEN E., ELAGÖZ S.
Internatonal Conference On Condensed Matter And Material Sciences, 11 - 15 Ekim 2017, (Özet Bildiri)
2017
20176. Simulation Of GaAs Based DBR Structures For VCSEL Application
ALAYDİN B. Ö., ŞENADIM TÜZEMEN E., ELAGÖZ S.
International Conference On Condensed Matter And Material Sciences, 11 - 15 Ekim 2017, (Özet Bildiri)
2017
20177. The effects of hydrostatics pressure and temperature on ground state electronic energy level in GaAs/InxGa1-xAs/GaAs SQW
BAŞER P., ELAGÖZ S.
Turkish Physics Socieaty 33rd International Physcis Congress, Bodrum, Türkiye, 6 - 10 Eylül 2017, (Özet Bildiri)
2017
20178. The Influences of Carrier Gas Flow on Crystal Quality of GaN
DEMİR İ., ALTUNTAŞ İ., Bulut B., ELAGÖZ S.
Turkish Physical Society 33rd International Physics Congress, Bodrum/Muğla, Türkiye, 6 - 10 Eylül 2017
2017
20179. MOCVD Grown InGaAs/InAlAs Superlattices for Quantum Cascade Laser Applications
ELAGÖZ S., DEMİR İ.
International Congress on Semiconductor Materials and Devices, Konya, Türkiye, 17 - 19 Ağustos 2017, ss.6, (Özet Bildiri)
2017
201710. Simulation of Highly Reflective GaN/AlxGa1-xN DBR Structure for UV-Blue LEDs
ALAYDİN B. Ö., ALTUNTAŞ İ., ŞENADIM TÜZEMEN E., ELAGÖZ S.
4th INTERNATIONAL CONFERENCE ON MATERIALS SCIENCE AND NANOTECHNOLOGY FOR NEXT GENERATION (MSNG2017), 28 - 01 Haziran 2017, (Özet Bildiri)
2017
201711. Investigation of ZnO based Distributed Bragg Reflectors (DBRs) by using Transfer Matrix Method
ŞENADIM TÜZEMEN E., ALAYDİN B. Ö., ELAGÖZ S.
4th INTERNATIONAL CONFERENCE ON MATERIALS SCIENCE AND NANOTECHNOLOGY FOR NEXT GENERATION, 28 - 30 Haziran 2017, (Özet Bildiri)
2017
201712. Using Source Delay Technique to Grow High Quality InAlAs/InGaAs superlattices by MOCVD
DEMİR İ., ALTUNTAŞ İ., ELAGÖZ S.
17th European Workshop on Metalorganic Vapour Phase Epitaxt (EW-MOVPE17), Greonable, Fransa, 18 - 21 Haziran 2017, (Özet Bildiri)
2017
201713. Growth of High Quality InGaN/GaN Multi Quantum Well via MOCVD and Introducing a Technique for Precise Thickness Determination
ALTUNTAŞ İ., DEMİR İ., ELAGÖZ S.
17th European Workshop on Metalorganic Vapour Phase Epitaxt (EW-MOVPE17), Greonable, Fransa, 18 - 21 Haziran 2017, (Özet Bildiri)
2017
201714. Optical Comparison of MOCVD Grown GaN Layers on Flat and Patterned Sapphire Substrates
DEMİR İ., ALTUNTAŞ İ., KIZILBULUT A. A., BULUT B., ELAGÖZ S.
III International Conference on Engineering and Natural Science (ICENS), Budapest, Macaristan, 3 - 07 Mayıs 2017, (Özet Bildiri)
2017
201715. STUDY OF DEFECTS IN GAN EPILAYER GROWN ON PATTERNED SAPPHIRE SUBSTRATE
ALTUNTAŞ İ., DEMİR İ., KIZILBULUT A. A., BULUT B., ERKUŞ M., ÇETİNKAYA A. O., et al.
III International Conference on Engineering and Natural Science (ICENS), Budapest, Macaristan, 3 - 07 Mayıs 2017, (Özet Bildiri)
2017
201716. Structural Comparison of Epitaxially Grown GaN Layer on Conventional Sapphire and Patterned Sapphire Substrates
ALTUNTAŞ İ., DEMİR İ., KIZILBULUT A. A., BULUT B., ELAGÖZ S.
III International Conference on Engineering and Natural Science (ICENS), Budapest, Macaristan, 3 - 07 Mayıs 2017, (Özet Bildiri)
2017
201717. Improved GaN Quality by Two Stages Ammonia Flow
DEMİR İ., ALTUNTAŞ İ., BULUT B., KIZILBULUT A. A., ELAGÖZ S.
III International Conference on Engineering and Natural Science (ICENS), Budapest, Macaristan, 3 - 07 Mayıs 2017, (Özet Bildiri)
2016
201618. High Quality InGaAs InAlAs Superlattices Growth by MOCVD
DEMİR İ., Alaydın B. Ö., ALTUNTAŞ İ., ELAGÖZ S.
3th International Nanoscience and Nanotechnolgy for Next Generation, 20 - 23 Ekim 2016
2016
201619. The Effects of Carrier Gas on 3D 2D Transition of GaN
ALTUNTAŞ İ., DEMİR İ., KIZILBULUT A. A., BULUT B., ELAGÖZ S.
3th International Nanoscience and Nanotechnolgy for Next Generation, Antalya, Türkiye, 20 - 23 Ekim 2016
2016
201620. A SYSTEMATICAL STUDY OF NUCLEATION LAYER GROWTH TEMPERATURE EFFECTS OF GaN BUFFER LAYER
ALTUN D., DEMİR İ., ŞENADIM TÜZEMEN E., ALTUNTAŞ İ., ELAGÖZ S.
Türk Fizik Derneği 32. Uluslararası Fizik Kongresi (TFD32), 6 - 09 Eylül 2016
2016
201621. AMMONIA PRE FLOW EFFECTS IN GROWTH OF EPITAXIAL GAN ON SAPPHIRE SUBSTRATE
BULUT B., DEMİR İ., ALTUNTAŞ İ., ELAGÖZ S.
Türk Fizik Derneği 32. Uluslararası Fizik Kongresi (TFD32), Muğla/Bodrum, Türkiye, 6 - 09 Eylül 2016
2016
201622. Effect of Recrystallization Time on Two Steps MOCVD Grown GaN
ALTUNTAŞ İ., DEMİR İ., ELAGÖZ S.
Turkish Physical Society 32nd International Physics Congress, Muğla, Türkiye, 6 - 09 Eylül 2016
2016
201623. THE EFFECTS OF NUCLEATION LAYER THICKNESS ON QUALITY OF GAN FILM
KIZILBULUT A. A., DEMİR İ., ALTUNTAŞ İ., ELAGÖZ S.
Türk Fizik Derneği 32. Uluslararası Fizik Kongresi (TFD32), Muğla/Bodrum, Türkiye, 6 - 09 Eylül 2016
2016
201624. Structural Optical Electrical and Magnetic Properties of Undoped and Ni Doped CdZnS
HOROZ S., DEMİR İ., EKİCİBİL A., ELAGÖZ S., ŞAHİN Ö.
Turkish Physical Society 32nd International Physics Congress, Muğla, Türkiye, 6 - 09 Eylül 2016
2016
201625. Growth And Characterization of High Aluminium Alloy Concentration x 0 9 AlxGa1 xAs for Optoelectronic Application
ALAYDIN B. Ö., DEMİR İ., ELAGÖZ S.
Turkish Physical Society 32nd International Physics Congress, Muğla, Türkiye, 6 - 09 Eylül 2016
2016
201626. EFFECT OF RECRYSTALLIZATION TIME ON TWO STEP MOCVD GROWN GAN
ALTUNTAŞ İ., DEMİR İ., ELAGÖZ S.
Türk Fizik Derneği 32. Uluslararası Fizik Kongresi (TFD32), Muğla/Bodrum, Türkiye, 6 - 09 Eylül 2016
2016
201627. A systematical study of nucleation layer growth temperature effectrs of GaN Buffer Layer
ALTUN D., DEMİR İ., ALTUNTAŞ İ., ELAGÖZ S., ŞENADIM TÜZEMEN E.
TFD32, Türk Fizik Derneği 32. Uluslararası Fizik Kongresi 6-9 Eylül 2016, Muğla Bodrum, 6 - 09 Eylül 2016, (Özet Bildiri)
2016
201628. V III Ratio Effect on Electrical and Optical Properties of Nearly Lattice Matched InxGa1 xAs Epilayers on InP
DEMİR İ., ALAYDIN B. Ö., ELAGÖZ S.
Turkish Physical Society 32nd International Physics Congress, Muğla, Türkiye, 6 - 09 Eylül 2016
2016
201629. Optical and Structural Properties of Lattice Matched and Slightly Lattice Mismatched MOCVD Grown InxGa1 x Epilayers
ALAYDIN B. Ö., ŞENADIM TÜZEMEN E., DEMİR İ., ELAGÖZ S.
16th International Balkan Workshop on Applied Physics and Materials Science (IBWAP 2016), Constanta, Romanya, 7 - 09 Temmuz 2016
2016
201630. Determine The refractive Index of Wurtzite GaN On Sapphire By Spectroscopic Ellipsometry
KIZILBULUT A. A., DEMİR İ., ALTUNTAŞ İ., ELAGÖZ S.
16th International Balkan Workshop on Applied Physics and Materials Science (IBWAP 2016), Constanta, Romanya, 6 - 09 Temmuz 2016
2016
201631. V III Ratio Effect on Doping of High Quality InAlAs for Quantum Cascade Laser Structures
DEMİR İ., ELAGÖZ S.
16th International Balkan Workshop on Applied Physics and Materials Science (IBWAP 2016), Constanta, Romanya, 7 - 09 Temmuz 2016
2016
201632. Ellipsometry and Photoluminescence Characterization of MOCVD Grown AlxGa1 xAs Layers x 0 21 0 33 0 42
DEMİR İ., KIZILBULUt A. A., BULUt B., ELAGÖZ S.
16th International Balkan Workshop on Applied Physics and Materials Science (IBWAP 2016), Constanta, Romanya, 7 - 09 Temmuz 2016
2016
201633. Optical and structural properties of lattice matched and slightly lattice mismatched MOCVD grown InxGa1 xAs epilayers
Özgür Behçet A., ŞENADIM TÜZEMEN E., DEMİR İ., ELAGÖZ S.
IBWAP 16th International Balkan Workshop on Applied Physics and Materials Science -16, 6 - 07 Temmuz 2016, (Özet Bildiri)
2016
201634. Optical and Structural Characterization of AlxGa1xAs GaAs Epilayers
DEMİR İ., BULUT B., KIZILBULUT A. A., ELAGÖZ S.
NanoTR-12 Nanoscience and Nanotechnology Conference, Gebze, Türkiye, 3 - 05 Haziran 2016
2016
201635. Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy
DEMİR İ., Robin Y., McClintock R., ELAGÖZ S., Zekentes K., Razeghi M.
E-MRS Spring Meeting, Lille, Fransa, 2 - 06 Mayıs 2016
2015
201536. ANFIS Kullanılarak ZnO İnce Filmin Yansıtma Özelliklerinin Modellenmesi ve Regresyon Analizi İle Sonuçlarının Karşılaştırılması
YÜKSEK A. G., ŞENADIM TÜZEMEN E., ELAGÖZ S., ARSLAN H.
2. ULUSAL YÖNETİM BİLİŞİM SİSTEMLERİ KONGRESİ, Türkiye, 8 - 10 Ekim 2015, (Özet Bildiri)
2015
201537. ANFIS KULLANARAK ZNO İNCE FİLMİN YANSITMA ÖZELLİKLERİNİN MODELLENMESİ VE REGRESYON ANALİZİ İLE SONUÇLARIN KARŞILAŞTIRILMASI
YÜKSEK A. G., ŞENADIM TÜZEMEN E., ELAGÖZ S., ARSLAN H.
2. ULUSAL YÖNETİM BİLİŞİM SİSTEMLERİ KONGRESİ, Türkiye, 8 - 10 Ekim 2015, (Tam Metin Bildiri)
2015
201538. Hydrgenic Impurity Dround Srare in GaAs GaInAs Single Quantum Well Structures
BAŞER P., ALTUNTAŞ İ., ELAGÖZ S.
9th International Physics Conference of The Balkan Physical Union-BPU9, 24 - 27 Ağustos 2015, (Özet Bildiri)
2015
201539. HYDROGENİC IMPURİTY GROUND STATE İN GaAS GAInAs Single Quantum Well Structures
BAŞER P., ALTUNTAŞ İ., ELAGÖZ S.
9th Internationla Physics Conference Of The Balkan Physical Union-BPU9, 24-27 aUGUST 2015, 24 - 27 Ağustos 2015, (Özet Bildiri)
2015
201540. Research for Optimizing Growth Conditions of Gallium Nitride Epilayers for Blue LED Structures Grown by MOCVD
B Özgür A., Alev K., ALTUNTAŞ İ., Baris B., Yalçınkaya M., ELAGÖZ S.
9th Internationla Physics Conference Of The Balkan Physical Union-BPU9, 24-27 aUGUST 2015, 24 - 27 Ağustos 2015, (Özet Bildiri)
2015
201541. Growth Studies Of Lattice Matched GaInAs and AlInAs Layers for Quantum Cascade Laser by MOCVD
ALTUNTAŞ İ., BULUT B., DEMİR İ., ELAGÖZ S.
9th Internationla Physics Conference Of The Balkan Physical Union-BPU9, 24-27 aUGUST 2015, 24 - 27 Ağustos 2015, (Özet Bildiri)
2013
201342. GROWTH TEMPERATURE EFFECTS ON SURFACE MORPHOLOGY OF EPITAXIAL GAAS LAYERS GROWN BY MOCVD
BALCI M., BOZ M. A., DEMİR İ., ALTUNTAŞ İ., ELAGÖZ S.
30th INTERNATIONAL PHYSICS CONGRESS, 2 - 05 Eylül 2013, (Tam Metin Bildiri)
2013
201343. Epitaxial Growth by Metal Organic Chemical Vapor Deposition MOCVD and Structural Characterization of GaAs Films on Ge Substrates
DEMİR İ., ALTUNTAŞ İ., ALAYDİN B. Ö., BOZ M. A., KARKI H. D., ELAGÖZ S.
NanoTR 9, 24 - 28 Temmuz 2013, (Tam Metin Bildiri)