Prof. Dr. HÜLYA DOĞAN

Yayın Ağı

SCI, SSCI ve AHCI İndekslerine Giren Dergilerde Yayınlanan Makaleler

Next-Generation Application-Based Artificial Intelligence in Modeling and Estimation for Ni/n-GaAs/In Schottky Barrier Diode

DOĞAN H., KOÇKANAT S.

Physica Status Solidi (A) Applications and Materials Science , cilt.220, sa.6, 2023 (SCI-Expanded)

Parameter Estimation of AI/p-Si Schottky Barrier Diode Using Different Meta-Heuristic Optimization Techniques

Doğan H.

SYMMETRY , cilt.14, ss.2389-3002, 2022 (SCI-Expanded)

Neural network estimations of annealed and non-annealed Schottky diode characteristics at wide temperatures range

DOĞAN H., Duman S., TORUN Y., AKKOYUN S., Doğan S., ATİCİ U.

Materials Science in Semiconductor Processing , cilt.149, 2022 (SCI-Expanded)

The effects of electron irradiation on the current-voltage and capacitance-voltage measurements of Sn/p-GaAs/Au diodes

Duman S., Kaya F. Ş., Doğan H., Turgut G., Şahin Y.

RADIATION PHYSICS AND CHEMISTRY , cilt.193, 2022 (SCI-Expanded)

Modeling of Schottky diode characteristic by machine learning techniques based on experimental data with wide temperature range

TORUN Y., DOĞAN H.

Superlattices and Microstructures , cilt.160, 2021 (SCI-Expanded)

CURRENT-VOLTAGE CHARACTERISTICS OF THERMALLY ANNEALED Ni/n-GaAs SCHOTTKY CONTACTS

Yıldırım N., Türüt A., Doğan H.

SURFACE REVIEW AND LETTERS , cilt.25, 2018 (SCI-Expanded)

The interface state density characterization by temperature-dependent capacitance-conductance-frequency measurements in Au/Ni/n-GaN structures

Turut A., Dogan H., Yildirim N.

MATERIALS RESEARCH EXPRESS , cilt.2, 2015 (SCI-Expanded)

Capacitance-conductance-frequency characteristics of Au/Ni/n-GaN/undoped GaN Structures

Doğan H., Yıldırım N., Orak I., Elagöz S., Türüt A.

PHYSICA B-CONDENSED MATTER , cilt.457, ss.48-53, 2015 (SCI-Expanded)

Temperature-dependent electrical transport properties of (Au/Ni)/n-GaN Schottky barrier diodes

Doğan H., Elagöz S.

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES , cilt.63, ss.186-192, 2014 (SCI-Expanded)

The parameter extraction of the thermally annealed Schottky barrier diode using the modified artificial bee colony

KARABOĞA N., KOÇKANAT S., DOĞAN H.

APPLIED INTELLIGENCE , cilt.38, sa.3, ss.279-288, 2013 (SCI-Expanded)

DEPENDENCE OF CHARACTERISTIC DIODE PARAMETERS IN Ni/n-GaAs CONTACTS ON THERMAL ANNEALING AND SAMPLE TEMPERATURE

Yildirim N., Dogan H., Korkut H., Turut A.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B , cilt.23, sa.27, ss.5237-5249, 2009 (SCI-Expanded)

Analysis of current-voltage-temperature characteristics and T0 anomaly in Cr/n-GaAs Schottky diodes fabricated by magnetron sputtering technique

Korkut H., Yildirim N., Turut A., Dogan H.

Materials Science and Engineering B: Solid-State Materials for Advanced Technology , cilt.157, ss.48-52, 2009 (SCI-Expanded)

Thermally annealed Ni/n-GaAs(Si)/In Schottky barrier diodes

DOĞAN H., YILDIRIM N., Turut A.

Microelectronic Engineering , cilt.85, sa.4, ss.655-658, 2008 (SCI-Expanded)

Prediction of lateral barrier height in identically prepared Ni/n-type GaAs Schottky barrier diodes

Doğan H., Korkut H., Yıldırım N., Turut A.

Applied Surface Science , cilt.253, ss.7467-7470, 2007 (SCI-Expanded)

The conductance and capacitance-frequency characteristics of Au/pyronine-B/ptype Si/Al contacts

Cakar M., Yildirim N., Dogan H., Turut A.

APPLIED SURFACE SCIENCE , cilt.253, sa.7, ss.3464-3468, 2007 (SCI-Expanded)

Determination of the characteristic parameters of Sn/n-GaAs/Al-Ge Schottky diodes by a barrier height inhomogeneity model

Doğan H., Yıldırım N., Turut A., Biber M., Ayyıldız E., Nuhoǧlu Ç.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.21, sa.6, ss.822-828, 2006 (SCI-Expanded)

Diğer Dergilerde Yayınlanan Makaleler

Schottky Bariyer Diyotlarında Termal Tavlama İşleminin ANFIS ile Modellenmesi

DOĞAN H.

Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi , cilt.14, sa.2, ss.696-705, 2024 (Hakemli Dergi)

Metal Kompleks Ara Katmanlı Schottky Diyotun Elektriksel ve Optik Parametrelerin Belirlenmesi

Bayat F. Z., Doğan H., Şeker M.

Journal of Engineering Faculty , cilt.1, sa.2, ss.16-24, 2023 (Hakemli Dergi)

Structure of Al/Organometallic Complex/p-Si Investigation of Electrical Properties

Doğan H.

Avrupa Bilim ve Teknoloji Dergisi , sa.46, ss.126-141, 2023 (Hakemli Dergi)

Photovoltaic and Electrical Properties of Al/ Ruthenium (II)-complex / p-Si Photodiode

Doğan H., Orak İ., Yıldırım N.

Cumhuriyet Science Journal , cilt.38, sa.2, ss.329, 2017 (Hakemli Dergi)

Hakemli Kongre / Sempozyum Bildiri Kitaplarında Yer Alan Yayınlar

Silisyum Tabanlı Metal/yarıiletken Fotodiyotların Elektriksel ve Fotoelektriksel Karakteristikleri

BAYAT F. Z., DOĞAN H.

International Scientific Research Congress Science and Engineering UBAK, Ankara, Türkiye, 16 Aralık 2023

Radyal Elektrik Dağıtım Sistemlerinde Gerilim Profillerinin İyileştirilmesi ve İletim Kayıplarının Azaltılması için Sistem Yapılandırmasına Bağlı Optimal Kapasitör Yerleşimi

Koca S., Şeker M., Doğan H.

IDAP-6th International Artificial Intelligence and Data Processing Symposium, Malatya, Türkiye, 8 - 09 Eylül 2022, ss.1-14

MODELLING of Al/p-Si SCHOTTKY PHOTO DIODE with GAUSSIAN PROGRESS REGRESSION

DOĞAN H., TORUN Y.

7. ULUSLARARASI ZEUGMA BİLİMSEL ARAŞTIRMALAR KONGRESİ 21-23 Ocak 2022 Gaziantep, Gaziantep, Türkiye, 21 - 23 Ocak 2022, ss.258-259

Controlling The Distributed Energy Resources UsingSmart Grid Standards

ÜNSAL ÇELİMLİ D. B., DOĞAN H., TORUN Y., KOÇKANAT S.

International Conference on Innovative Engineering Applications 2018, Sivas, Türkiye, 20 - 22 Eylül 2018, ss.578-585

INVESTIGATION OF CURRENT AND VOLTAGE FLUCTUATIONS INELECTRIC ARC FURNACES WITH THE HELP OF PROBABILITY THEORY

ŞEKER M., MEMMEDOV A., ÇIKAN M., DOĞAN H., KOÇKANAT S.

International Conference on AdvancedTechnology Sciences (ICAT 2017), İstanbul, Türkiye, 9 Mayıs - 12 Eylül 2017