Yayınlar & Eserler

Yayın Ağı
Makaleler 19
Tümü (19)
SCI-E, SSCI, AHCI (11)
SCI-E, SSCI, AHCI, ESCI (13)
ESCI (2)
Scopus (13)
TRDizin (4)
Diğer Yayınlar (3)

1. A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality

demir m., ELAGÖZ S.
Cumhuriyet Science Journal , cilt.45, sa.2, ss.400-406, 2024 (Hakemli Dergi) identifier

2. The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures

ALTUNTAŞ İ., ELAGÖZ S.
International Journal of Innovative Engineering Applications , cilt.5, sa.1, ss.6-10, 2021 (Hakemli Dergi) identifier

3. Influences of thickness and temperature of low temperature GaAs buffer layer on two-step MOVPE grown GaAs/Ge heterostructures

DEMİR İ., KASAPOĞLU A. E., BUDAK H. F., GÜR E., Elagoz S.
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS , cilt.90, sa.2, 2020 (SCI-Expanded, Scopus) identifier identifier

4. AlGaN/AlN MOVPE heteroepitaxy: pulsed co-doping SiH4 and TMIn

DEMİR İ., Kocak Y., KASAPOĞLU A. E., Razeghi M., GÜR E., Elagoz S.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.34, sa.7, 2019 (SCI-Expanded, Scopus) identifier identifier

5. High brightness ultraviolet light-emitting diodes grown on patterned silicon substrate

Robin Y., Ding K., DEMİR İ., McClintock R., ELAGÖZ S., Razeghi M.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.90, ss.87-91, 2019 (SCI-Expanded) identifier identifier

6. Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications

DEMİR İ., ALTUNTAŞ İ., Bulut B., Ezzedini M., ERGÜN Y., ELAGÖZ S.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.33, sa.5, 2018 (SCI-Expanded, Scopus) identifier identifier

7. The effects of two-stage HT-GaN growth with different V/III ratios during 3D-2D transition

ALTUNTAŞ İ., DEMİR İ., KASAPOĞLU A. E., Mobtakeri S., GÜR E., ELAGÖZ S.
JOURNAL OF PHYSICS D-APPLIED PHYSICS , cilt.51, sa.3, 2018 (SCI-Expanded) identifier identifier

8. V/III ratio effects on high quality InAlAs for quantum cascade laser structures

DEMİR İ., ELAGÖZ S.
SUPERLATTICES AND MICROSTRUCTURES , cilt.104, ss.140-148, 2017 (SCI-Expanded) identifier identifier

9. Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy

Demir İ., Robin Y., McClintock R., ELAGÖZ S., Zekentes K., Razeghi M.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , cilt.214, sa.4, 2017 (SCI-Expanded) identifier identifier

10. Interruption time effects on InGaAs/InAlAs superlattices of quantum cascade laser structures grown by MOCVD

DEMİR İ., ELAGÖZ S.
SUPERLATTICES AND MICROSTRUCTURES , cilt.100, ss.723-729, 2016 (SCI-Expanded) identifier identifier

11. Growth of InGaAs/InAlAs superlattices by MOCVD and precise thickness determination via HRXRD

Demir İ., ELAGÖZ S.
GAZI UNIVERSITY JOURNAL OF SCIENCE , cilt.29, sa.4, ss.947-951, 2016 (ESCI) identifier identifier

12. Capacitance-conductance-frequency characteristics of Au/Ni/n-GaN/undoped GaN Structures

Doğan H., Yıldırım N., Orak I., Elagöz S., Türüt A.
PHYSICA B-CONDENSED MATTER , cilt.457, ss.48-53, 2015 (SCI-Expanded, Scopus) identifier

13. Structural and electrical properties of nitrogen-doped ZnO thin films

Tuzemen E., Kara K., ELAGÖZ S., TAKCI D. K., ALTUNTAŞ İ., ESEN R.
APPLIED SURFACE SCIENCE , cilt.318, ss.157-163, 2014 (SCI-Expanded) identifier identifier

14. Temperature-dependent electrical transport properties of (Au/Ni)/n-GaN Schottky barrier diodes

Doğan H., Elagöz S.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES , cilt.63, ss.186-192, 2014 (SCI-Expanded, Scopus) identifier identifier

15. XRD XPS and optical characterizations of Al doped ZnO film grown on GaAs substrate

ŞENADIM TÜZEMEN E., Şahin H., KARA K., ELAGÖZ S., ESEN R.
TURKISH JOURNAL OF PHYSICS , cilt.38, ss.111-117, 2014 (ESCI) identifier identifier

16. Effects of Annealing on Reflectance of ZnO Grown by PFCVAD

ŞENADIM TÜZEMEN E., ELAGÖZ S., Şahin H., KARA K., ESEN R., Bulut A.
Marmara Üniversitesi Fen Bilimleri Dergisi , cilt.25, ss.41, 2013 (Hakemli Dergi)

17. In concentration dependence of shallow impurity binding energy under the hydrostatic pressure

BAŞER P., ALTUNTAŞ İ., ELAGÖZ S.
Marmara Üni fen bilimleri dergisi , cilt.23, sa.4, ss.171-180, 2011 (Hakemli Dergi)

18. In Concentration Dependence of Shallow Impurity Binding Enegry Under The Hydrostatic Pressure

BAŞER P., ALTUNTAŞ İ., ELAGÖZ S.
Marmara Üniversitesi Fen Bilimleri Dergisi , cilt.23, sa.4, ss.171-180, 2011 (Hakemli Dergi)

19. Çift parabolik kuşatma altında kuantum sistemi elektronik enerji düzeyleri

ELAGÖZ S., USLU O., BAŞER P.
Marmara Üni fen bilimleri dergisi , cilt.20, ss.1-12, 2008 (Hakemli Dergi)
Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler 43

1. The Effects of Two Stages GaN Growth with Different V/III Ratios During 3D-2D Transition

ALTUNTAŞ İ., DEMİR İ., ELAGÖZ S.
8th International Conference and Exhibition on LASERS, OPTICS PHOTONICS, Las Vegas, Amerika Birleşik Devletleri, 15 - 17 Kasım 2017, (Özet Bildiri)

2. High quality nitride materials (AlN and AlGaN) on Si and sapphire substrates and UV-LED applications

DEMİR İ., Li H., Robin Y., McClintock R., ALTUNTAŞ İ., ELAGÖZ S., et al.
8th International Conference and Exhibition on Lasers, Optics Photonics, LasVegas, Amerika Birleşik Devletleri, 15 - 17 Kasım 2017, cilt.4, ss.149, (Özet Bildiri)

3. POLYGONUM COGNATUM Meissn. VE FUNGUSLU ORTAMDA FARKLI BOYUTLARDA SENTEZLENEN GÜMÜŞ NANOPARTİKÜLLERİNİN (AgNP) ANTİMİKROBİYAL ÖZELLİKLERİNİN ARAŞTIRILMASI

GÜRSOY N., ELAGÖZ S., GÖLGE E., BULUT A., DEMİR T.
TARGİD 3. İç Anadolu Tarım ve Gıda Kongresi, 26 - 28 Ekim 2017, (Özet Bildiri)

4. Effect of LT-GaN Thickness on the Structural Properties of GaN Grown On PSS by Mocvd

ALTUN D., ALAYDİN B. Ö., Bulut B., Erkuş M., ELAGÖZ S.
2nd International Mediterranean Science And Engineering Congress, 25 - 27 Ekim 2017, (Özet Bildiri)

5. Modelling Highly Reflective AlAs1-xPx/GaAs Dbr Structure

ALAYDİN B. Ö., ŞENADIM TÜZEMEN E., ELAGÖZ S.
Internatonal Conference On Condensed Matter And Material Sciences, 11 - 15 Ekim 2017, (Özet Bildiri)

6. Simulation Of GaAs Based DBR Structures For VCSEL Application

ALAYDİN B. Ö., ŞENADIM TÜZEMEN E., ELAGÖZ S.
International Conference On Condensed Matter And Material Sciences, 11 - 15 Ekim 2017, (Özet Bildiri)

7. The effects of hydrostatics pressure and temperature on ground state electronic energy level in GaAs/InxGa1-xAs/GaAs SQW

BAŞER P., ELAGÖZ S.
Turkish Physics Socieaty 33rd International Physcis Congress, Bodrum, Türkiye, 6 - 10 Eylül 2017, (Özet Bildiri)

8. The Influences of Carrier Gas Flow on Crystal Quality of GaN

DEMİR İ., ALTUNTAŞ İ., Bulut B., ELAGÖZ S.
Turkish Physical Society 33rd International Physics Congress, Bodrum/Muğla, Türkiye, 6 - 10 Eylül 2017

9. MOCVD Grown InGaAs/InAlAs Superlattices for Quantum Cascade Laser Applications

ELAGÖZ S., DEMİR İ.
International Congress on Semiconductor Materials and Devices, Konya, Türkiye, 17 - 19 Ağustos 2017, ss.6, (Özet Bildiri)

10. Simulation of Highly Reflective GaN/AlxGa1-xN DBR Structure for UV-Blue LEDs

ALAYDİN B. Ö., ALTUNTAŞ İ., ŞENADIM TÜZEMEN E., ELAGÖZ S.
4th INTERNATIONAL CONFERENCE ON MATERIALS SCIENCE AND NANOTECHNOLOGY FOR NEXT GENERATION (MSNG2017), 28 - 01 Haziran 2017, (Özet Bildiri)

11. Investigation of ZnO based Distributed Bragg Reflectors (DBRs) by using Transfer Matrix Method

ŞENADIM TÜZEMEN E., ALAYDİN B. Ö., ELAGÖZ S.
4th INTERNATIONAL CONFERENCE ON MATERIALS SCIENCE AND NANOTECHNOLOGY FOR NEXT GENERATION, 28 - 30 Haziran 2017, (Özet Bildiri)

12. Using Source Delay Technique to Grow High Quality InAlAs/InGaAs superlattices by MOCVD

DEMİR İ., ALTUNTAŞ İ., ELAGÖZ S.
17th European Workshop on Metalorganic Vapour Phase Epitaxt (EW-MOVPE17), Greonable, Fransa, 18 - 21 Haziran 2017, (Özet Bildiri)

13. Growth of High Quality InGaN/GaN Multi Quantum Well via MOCVD and Introducing a Technique for Precise Thickness Determination

ALTUNTAŞ İ., DEMİR İ., ELAGÖZ S.
17th European Workshop on Metalorganic Vapour Phase Epitaxt (EW-MOVPE17), Greonable, Fransa, 18 - 21 Haziran 2017, (Özet Bildiri)

14. Optical Comparison of MOCVD Grown GaN Layers on Flat and Patterned Sapphire Substrates

DEMİR İ., ALTUNTAŞ İ., KIZILBULUT A. A., BULUT B., ELAGÖZ S.
III International Conference on Engineering and Natural Science (ICENS), Budapest, Macaristan, 3 - 07 Mayıs 2017, (Özet Bildiri)

15. STUDY OF DEFECTS IN GAN EPILAYER GROWN ON PATTERNED SAPPHIRE SUBSTRATE

ALTUNTAŞ İ., DEMİR İ., KIZILBULUT A. A., BULUT B., ERKUŞ M., ÇETİNKAYA A. O., et al.
III International Conference on Engineering and Natural Science (ICENS), Budapest, Macaristan, 3 - 07 Mayıs 2017, (Özet Bildiri)

16. Structural Comparison of Epitaxially Grown GaN Layer on Conventional Sapphire and Patterned Sapphire Substrates

ALTUNTAŞ İ., DEMİR İ., KIZILBULUT A. A., BULUT B., ELAGÖZ S.
III International Conference on Engineering and Natural Science (ICENS), Budapest, Macaristan, 3 - 07 Mayıs 2017, (Özet Bildiri)

17. Improved GaN Quality by Two Stages Ammonia Flow

DEMİR İ., ALTUNTAŞ İ., BULUT B., KIZILBULUT A. A., ELAGÖZ S.
III International Conference on Engineering and Natural Science (ICENS), Budapest, Macaristan, 3 - 07 Mayıs 2017, (Özet Bildiri)

18. High Quality InGaAs InAlAs Superlattices Growth by MOCVD

DEMİR İ., Alaydın B. Ö., ALTUNTAŞ İ., ELAGÖZ S.
3th International Nanoscience and Nanotechnolgy for Next Generation, 20 - 23 Ekim 2016

19. The Effects of Carrier Gas on 3D 2D Transition of GaN

ALTUNTAŞ İ., DEMİR İ., KIZILBULUT A. A., BULUT B., ELAGÖZ S.
3th International Nanoscience and Nanotechnolgy for Next Generation, Antalya, Türkiye, 20 - 23 Ekim 2016

20. A SYSTEMATICAL STUDY OF NUCLEATION LAYER GROWTH TEMPERATURE EFFECTS OF GaN BUFFER LAYER

ALTUN D., DEMİR İ., ŞENADIM TÜZEMEN E., ALTUNTAŞ İ., ELAGÖZ S.
Türk Fizik Derneği 32. Uluslararası Fizik Kongresi (TFD32), 6 - 09 Eylül 2016

21. AMMONIA PRE FLOW EFFECTS IN GROWTH OF EPITAXIAL GAN ON SAPPHIRE SUBSTRATE

BULUT B., DEMİR İ., ALTUNTAŞ İ., ELAGÖZ S.
Türk Fizik Derneği 32. Uluslararası Fizik Kongresi (TFD32), Muğla/Bodrum, Türkiye, 6 - 09 Eylül 2016

22. Effect of Recrystallization Time on Two Steps MOCVD Grown GaN

ALTUNTAŞ İ., DEMİR İ., ELAGÖZ S.
Turkish Physical Society 32nd International Physics Congress, Muğla, Türkiye, 6 - 09 Eylül 2016

23. THE EFFECTS OF NUCLEATION LAYER THICKNESS ON QUALITY OF GAN FILM

KIZILBULUT A. A., DEMİR İ., ALTUNTAŞ İ., ELAGÖZ S.
Türk Fizik Derneği 32. Uluslararası Fizik Kongresi (TFD32), Muğla/Bodrum, Türkiye, 6 - 09 Eylül 2016

24. Structural Optical Electrical and Magnetic Properties of Undoped and Ni Doped CdZnS

HOROZ S., DEMİR İ., EKİCİBİL A., ELAGÖZ S., ŞAHİN Ö.
Turkish Physical Society 32nd International Physics Congress, Muğla, Türkiye, 6 - 09 Eylül 2016

25. Growth And Characterization of High Aluminium Alloy Concentration x 0 9 AlxGa1 xAs for Optoelectronic Application

ALAYDIN B. Ö., DEMİR İ., ELAGÖZ S.
Turkish Physical Society 32nd International Physics Congress, Muğla, Türkiye, 6 - 09 Eylül 2016

26. EFFECT OF RECRYSTALLIZATION TIME ON TWO STEP MOCVD GROWN GAN

ALTUNTAŞ İ., DEMİR İ., ELAGÖZ S.
Türk Fizik Derneği 32. Uluslararası Fizik Kongresi (TFD32), Muğla/Bodrum, Türkiye, 6 - 09 Eylül 2016

27. A systematical study of nucleation layer growth temperature effectrs of GaN Buffer Layer

ALTUN D., DEMİR İ., ALTUNTAŞ İ., ELAGÖZ S., ŞENADIM TÜZEMEN E.
TFD32, Türk Fizik Derneği 32. Uluslararası Fizik Kongresi 6-9 Eylül 2016, Muğla Bodrum, 6 - 09 Eylül 2016, (Özet Bildiri)

28. V III Ratio Effect on Electrical and Optical Properties of Nearly Lattice Matched InxGa1 xAs Epilayers on InP

DEMİR İ., ALAYDIN B. Ö., ELAGÖZ S.
Turkish Physical Society 32nd International Physics Congress, Muğla, Türkiye, 6 - 09 Eylül 2016

29. Optical and Structural Properties of Lattice Matched and Slightly Lattice Mismatched MOCVD Grown InxGa1 x Epilayers

ALAYDIN B. Ö., ŞENADIM TÜZEMEN E., DEMİR İ., ELAGÖZ S.
16th International Balkan Workshop on Applied Physics and Materials Science (IBWAP 2016), Constanta, Romanya, 7 - 09 Temmuz 2016

30. Determine The refractive Index of Wurtzite GaN On Sapphire By Spectroscopic Ellipsometry

KIZILBULUT A. A., DEMİR İ., ALTUNTAŞ İ., ELAGÖZ S.
16th International Balkan Workshop on Applied Physics and Materials Science (IBWAP 2016), Constanta, Romanya, 6 - 09 Temmuz 2016

31. V III Ratio Effect on Doping of High Quality InAlAs for Quantum Cascade Laser Structures

DEMİR İ., ELAGÖZ S.
16th International Balkan Workshop on Applied Physics and Materials Science (IBWAP 2016), Constanta, Romanya, 7 - 09 Temmuz 2016

32. Ellipsometry and Photoluminescence Characterization of MOCVD Grown AlxGa1 xAs Layers x 0 21 0 33 0 42

DEMİR İ., KIZILBULUt A. A., BULUt B., ELAGÖZ S.
16th International Balkan Workshop on Applied Physics and Materials Science (IBWAP 2016), Constanta, Romanya, 7 - 09 Temmuz 2016

33. Optical and structural properties of lattice matched and slightly lattice mismatched MOCVD grown InxGa1 xAs epilayers

Özgür Behçet A., ŞENADIM TÜZEMEN E., DEMİR İ., ELAGÖZ S.
IBWAP 16th International Balkan Workshop on Applied Physics and Materials Science -16, 6 - 07 Temmuz 2016, (Özet Bildiri)

34. Optical and Structural Characterization of AlxGa1xAs GaAs Epilayers

DEMİR İ., BULUT B., KIZILBULUT A. A., ELAGÖZ S.
NanoTR-12 Nanoscience and Nanotechnology Conference, Gebze, Türkiye, 3 - 05 Haziran 2016

35. Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy

DEMİR İ., Robin Y., McClintock R., ELAGÖZ S., Zekentes K., Razeghi M.
E-MRS Spring Meeting, Lille, Fransa, 2 - 06 Mayıs 2016

36. ANFIS Kullanılarak ZnO İnce Filmin Yansıtma Özelliklerinin Modellenmesi ve Regresyon Analizi İle Sonuçlarının Karşılaştırılması

YÜKSEK A. G., ŞENADIM TÜZEMEN E., ELAGÖZ S., ARSLAN H.
2. ULUSAL YÖNETİM BİLİŞİM SİSTEMLERİ KONGRESİ, Türkiye, 8 - 10 Ekim 2015, (Özet Bildiri)

37. ANFIS KULLANARAK ZNO İNCE FİLMİN YANSITMA ÖZELLİKLERİNİN MODELLENMESİ VE REGRESYON ANALİZİ İLE SONUÇLARIN KARŞILAŞTIRILMASI

YÜKSEK A. G., ŞENADIM TÜZEMEN E., ELAGÖZ S., ARSLAN H.
2. ULUSAL YÖNETİM BİLİŞİM SİSTEMLERİ KONGRESİ, Türkiye, 8 - 10 Ekim 2015, (Tam Metin Bildiri)

38. Hydrgenic Impurity Dround Srare in GaAs GaInAs Single Quantum Well Structures

BAŞER P., ALTUNTAŞ İ., ELAGÖZ S.
9th International Physics Conference of The Balkan Physical Union-BPU9, 24 - 27 Ağustos 2015, (Özet Bildiri)

39. HYDROGENİC IMPURİTY GROUND STATE İN GaAS GAInAs Single Quantum Well Structures

BAŞER P., ALTUNTAŞ İ., ELAGÖZ S.
9th Internationla Physics Conference Of The Balkan Physical Union-BPU9, 24-27 aUGUST 2015, 24 - 27 Ağustos 2015, (Özet Bildiri)

40. Research for Optimizing Growth Conditions of Gallium Nitride Epilayers for Blue LED Structures Grown by MOCVD

B Özgür A., Alev K., ALTUNTAŞ İ., Baris B., Yalçınkaya M., ELAGÖZ S.
9th Internationla Physics Conference Of The Balkan Physical Union-BPU9, 24-27 aUGUST 2015, 24 - 27 Ağustos 2015, (Özet Bildiri)

41. Growth Studies Of Lattice Matched GaInAs and AlInAs Layers for Quantum Cascade Laser by MOCVD

ALTUNTAŞ İ., BULUT B., DEMİR İ., ELAGÖZ S.
9th Internationla Physics Conference Of The Balkan Physical Union-BPU9, 24-27 aUGUST 2015, 24 - 27 Ağustos 2015, (Özet Bildiri)

42. GROWTH TEMPERATURE EFFECTS ON SURFACE MORPHOLOGY OF EPITAXIAL GAAS LAYERS GROWN BY MOCVD

BALCI M., BOZ M. A., DEMİR İ., ALTUNTAŞ İ., ELAGÖZ S.
30th INTERNATIONAL PHYSICS CONGRESS, 2 - 05 Eylül 2013, (Tam Metin Bildiri)

43. Epitaxial Growth by Metal Organic Chemical Vapor Deposition MOCVD and Structural Characterization of GaAs Films on Ge Substrates

DEMİR İ., ALTUNTAŞ İ., ALAYDİN B. Ö., BOZ M. A., KARKI H. D., ELAGÖZ S.
NanoTR 9, 24 - 28 Temmuz 2013, (Tam Metin Bildiri)
Metrikler

Yayın

66

Yayın (WoS)

13

Yayın (Scopus)

13

Atıf (WoS)

90

H-İndeks (WoS)

6

Atıf (Scopus)

143

H-İndeks (Scopus)

9

Atıf (TrDizin)

1

H-İndeks (TrDizin)

1

Atıf (Diğer Toplam)

2

Proje

8