Publications & Works

Articles Published in Journals That Entered SCI, SSCI and AHCI Indexes

Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.127, no.105733, pp.105733, 2021 (Journal Indexed in SCI Expanded)

Simulation of Highly Reflective GaN/AlxGa1-xN Distributed Bragg Reflector Structure for UV-Blue LEDs

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, vol.13, no.3, pp.387-393, 2018 (Journal Indexed in SCI) identifier

Articles Published in Other Journals

The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures

International Journal of Innovative Engineering Applications, vol.5, no.1, pp.6-10, 2021 (Other Refereed National Journals)

XRD and photoluminescence measurements of GaN grown on dome shaped patterned sapphire with different NH3 flow rates

Cumhuriyet Science Journal, vol.42, no.1, pp.184-190, 2021 (Other Refereed National Journals)

In concentration dependence of shallow impurity binding energy under the hydrostatic pressure

Marmara Üni fen bilimleri dergisi, vol.23, no.4, pp.171-180, 2011 (Other Refereed National Journals)

Refereed Congress / Symposium Publications in Proceedings

Si (111) Alttaşı Üzerine Büyütülmüş AIN İnce Filmlerin Spektroskopik Elipsometri Tekniği İle Optik Karakterizasyonu

9. Uluslararası Bilimsel Araştırmalar Kongresi, Fen ve Mühendislik Bilimleri, Ankara, Turkey, 12 - 13 December 2020, pp.125

Çekirdeklenme Tabakası Sıcaklığının MOCVD Yöntemi İle Büyütülen AlN İnce Filmlerin Kristal Kalitesi Üzerindeki Etkisi

9. Uluslararası Bilimsel Araştırmalar Kongresi, Fen ve Mühendislik Bilimleri, Ankara, Turkey, 12 - 13 December 2020, pp.417-426

MOVPE PALE Tekniği ile Safir Üzerine Si Katkılı AlN’ın Epitaksiyel Büyütülmesi ve Karakterizasyonu

9. Uluslararası Bilimsel Araştırmalar Kongresi, Fen ve Mühendislik Bilimleri, Ankara, Turkey, 12 - 13 December 2020, pp.167

Annealing effect on optical and electrical properties of p-GaN

International Eurasian Conference on Science, Engineering and Technology (EurasianSciEnTech 2018), 22 - 23 November 2018

EFFECT OF V/III RATIO ON C-PLANE GAN LAYERS WITH TWO STAGES HT-GAN

4th International Conference on Engineering and Natural Sciences (ICENS), 2 - 06 May 2018

GROWTH AND CHARACTERIZATION STUDY ON STRAIN BALANCED QUANTUM CASCADE LASER STRUCTURES

4th International Conference on Engineering and Natural Sciences (ICENS), 2 - 06 May 2018

The Effects of Two Stages GaN Growth with Different V/III Ratios During 3D-2D Transition

8th International Conference and Exhibition on LASERS, OPTICS PHOTONICS, Las Vegas, United States Of America, 15 - 17 November 2017

High quality nitride materials (AlN and AlGaN) on Si and sapphire substrates and UV-LED applications

8th International Conference and Exhibition on Lasers, Optics Photonics, LasVegas, United States Of America, 15 - 17 November 2017, vol.4, pp.149

The Influences of Carrier Gas Flow on Crystal Quality of GaN

Turkish Physical Society 33rd International Physics Congress, Bodrum/Muğla, Turkey, 6 - 10 September 2017

Simulation of Highly Reflective GaN/AlxGa1-xN DBR Structure for UV-Blue LEDs

4th INTERNATIONAL CONFERENCE ON MATERIALS SCIENCE AND NANOTECHNOLOGY FOR NEXT GENERATION (MSNG2017), 28 - 01 June 2017

Using Source Delay Technique to Grow High Quality InAlAs/InGaAs superlattices by MOCVD

17th European Workshop on Metalorganic Vapour Phase Epitaxt (EW-MOVPE17), Greonable, France, 18 - 21 June 2017

Growth of High Quality InGaN/GaN Multi Quantum Well via MOCVD and Introducing a Technique for Precise Thickness Determination

17th European Workshop on Metalorganic Vapour Phase Epitaxt (EW-MOVPE17), Greonable, France, 18 - 21 June 2017

STUDY OF DEFECTS IN GAN EPILAYER GROWN ON PATTERNED SAPPHIRE SUBSTRATE

III International Conference on Engineering and Natural Science (ICENS), Budapest, Hungary, 3 - 07 May 2017

Improved GaN Quality by Two Stages Ammonia Flow

III International Conference on Engineering and Natural Science (ICENS), Budapest, Hungary, 3 - 07 May 2017

Structural Comparison of Epitaxially Grown GaN Layer on Conventional Sapphire and Patterned Sapphire Substrates

III International Conference on Engineering and Natural Science (ICENS), Budapest, Hungary, 3 - 07 May 2017

Optical Comparison of MOCVD Grown GaN Layers on Flat and Patterned Sapphire Substrates

III International Conference on Engineering and Natural Science (ICENS), Budapest, Hungary, 3 - 07 May 2017

High Quality InGaAs InAlAs Superlattices Growth by MOCVD

3th International Nanoscience and Nanotechnolgy for Next Generation, 20 - 23 October 2016

The Effects of Carrier Gas on 3D 2D Transition of GaN

3th International Nanoscience and Nanotechnolgy for Next Generation, Antalya, Turkey, 20 - 23 October 2016

High Quality InGaAs/InAlAs Superlattices Growth by MOCVD

3th NANOSCIENCE NANOTECHNOLOGY FOR NEXT GENERATION, 1 - 03 October 2016

AMMONIA PRE FLOW EFFECTS IN GROWTH OF EPITAXIAL GAN ON SAPPHIRE SUBSTRATE

Türk Fizik Derneği 32. Uluslararası Fizik Kongresi (TFD32), Muğla/Bodrum, Turkey, 6 - 09 September 2016

EFFECT OF RECRYSTALLIZATION TIME ON TWO STEP MOCVD GROWN GAN

Türk Fizik Derneği 32. Uluslararası Fizik Kongresi (TFD32), Muğla/Bodrum, Turkey, 6 - 09 September 2016

THE EFFECTS OF NUCLEATION LAYER THICKNESS ON QUALITY OF GAN FILM

Türk Fizik Derneği 32. Uluslararası Fizik Kongresi (TFD32), Muğla/Bodrum, Turkey, 6 - 09 September 2016

A systematical study of nucleation layer growth temperature effectrs of GaN Buffer Layer

TFD32, Türk Fizik Derneği 32. Uluslararası Fizik Kongresi 6-9 Eylül 2016, Muğla Bodrum, 6 - 09 September 2016

Effect of Recrystallization Time on Two Steps MOCVD Grown GaN

Turkish Physical Society 32nd International Physics Congress, Muğla, Turkey, 6 - 09 September 2016

Determine The refractive Index of Wurtzite GaN On Sapphire By Spectroscopic Ellipsometry

16th International Balkan Workshop on Applied Physics and Materials Science (IBWAP 2016), Constanta, Romania, 6 - 09 July 2016

Hydrgenic Impurity Dround Srare in GaAs GaInAs Single Quantum Well Structures

9th International Physics Conference of The Balkan Physical Union-BPU9, 24 - 27 August 2015