Doç. Dr. İSMAİL ALTUNTAŞ

Yayın Ağı

Makaleler 43

1. MOVPE growth and optimization of InxAl1-xAs layers on InP for high-performance quantum cascade lasers

Badreddine S., DEMİR İ., Abir H., Hélène C., Nur Kocak M., Ismail A., et al.

Applied Physics B: Lasers and Optics , cilt.131, sa.11, 2025 (SCI-Expanded)

2. Predicting optical properties of NiO films fabricated by RF magnetron sputtering: A machine learning approach

YÜKSEK A. G., Horoz S., ALTUNTAŞ İ., DEMİR İ., Tüzemen E.

Optik , cilt.321, 2025 (SCI-Expanded)

3. Enhancing the Crystal Quality of AlN Thin Films on Patterned Sapphire Substrates Using Temperature-Modulated Growth in the PALE Technique

Özbakir F., ALTUNTAŞ İ.

Arabian Journal for Science and Engineering , 2025 (SCI-Expanded)

4. Characterization of SiNx grown at different nitrogen flow and prediction of refractive index using artificial neural networks

YÜKSEK A. G., Horoz S., DEMİR İ., ALTUNTAŞ İ., ŞENADIM TÜZEMEN E.

Physica B: Condensed Matter , cilt.695, 2024 (SCI-Expanded)

5. Effect of substrate temperature on Raman study and optical properties of GeOx/Si thin films

Baghdedi D., Hopoğlu H., DEMİR İ., ALTUNTAŞ İ., Abdelmoula N., Tüzemen E.

Journal of the Australian Ceramic Society , cilt.60, sa.2, ss.591-599, 2024 (SCI-Expanded)

6. Electrical characteristics of Al/AlGaAs/GaAs diode with high-Al concentration at the interface

Gullu H., Yıldız D., Yıldırım M., DEMİR İ., ALTUNTAŞ İ.

Journal of Materials Science: Materials in Electronics , cilt.35, sa.2, 2024 (SCI-Expanded)

7. Modeling of temperature-dependent photoluminescence of GaN epilayer by artificial neural network

Tüzemen E., YÜKSEK A. G., DEMİR İ., Horoz S., ALTUNTAŞ İ.

Journal of the Australian Ceramic Society , cilt.59, sa.5, ss.1145-1159, 2023 (SCI-Expanded)

8. Influence of Highly Efficient Carbon Doping on AlxGa1−xAs Layers with Different Al Compositions (x) Grown by MOVPE

Perkitel I., Kekül R., ALTUNTAŞ İ., GÜR E., DEMİR İ.

Journal of Electronic Materials , cilt.52, sa.9, ss.6042-6051, 2023 (SCI-Expanded)

9. Investigating the optical, electronic, magnetic properties and DFT of NiO films prepared using RF sputtering with various argon pressures

Hopoğlu H., KAYA D., Maslov M. M., KAYA S., DEMİR İ., ALTUNTAŞ İ., et al.

Physica B: Condensed Matter , cilt.661, 2023 (SCI-Expanded)

10. Comprehensive growth and characterization study of GeOx/Si

Baghdedi D., Hopoğlu H., SARITAŞ S., DEMİR İ., ALTUNTAŞ İ., Abdelmoula N., et al.

Journal of Molecular Structure , cilt.1274, 2023 (SCI-Expanded)

11. High-quality AlN growth: a detailed study on ammonia flow

Yolcu G., Koçak M. N., Ünal D. H., ALTUNTAŞ İ., Horoz S., DEMİR İ.

Journal of Materials Science: Materials in Electronics , cilt.34, sa.4, 2023 (SCI-Expanded)

12. Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation

Ben Arbia M., DEMİR İ., Kaur N., Saidi F., Zappa D., Comini E., et al.

Materials Science in Semiconductor Processing , cilt.153, 2023 (SCI-Expanded)

13. In-situ thermal cleaning of the sapphire substrate and temperature effect on epitaxial AlN

Kocak M. N., Yolcu G., Horoz S., ALTUNTAŞ İ., DEMİR İ.

VACUUM , cilt.205, 2022 (SCI-Expanded)

14. Determination of Optical Properties of MOVPE-Grown InxGa1-xAs/InP Epitaxial Structures by Spectroscopic Ellipsometry

Kaynar E., Sayrac M., Altuntas I., Demir I.

BRAZILIAN JOURNAL OF PHYSICS , cilt.52, sa.5, 2022 (SCI-Expanded)

15. In-situ and ex-situ face-to-face annealing of epitaxial AlN

Kocak M. N., Purlue K. M., Perkitel I., ALTUNTAŞ İ., DEMİR İ.

VACUUM , cilt.203, 2022 (SCI-Expanded)

16. The influence of TMGa pre-flow time and amount as surfactant on the structural and optical properties of AlN epilayer

Yolcu G., Simsek I., Kekul R., Altuntaş İ., Horoz S., Demir İ.

MICRO AND NANOSTRUCTURES , cilt.168, 2022 (SCI-Expanded)

17. Optical and nano-mechanical characterization of c-axis oriented AlN film

Panda P., Rajagopalan R., Tripursundari S., ALTUNTAŞ İ., DEMİR İ.

Optical Materials , cilt.129, 2022 (SCI-Expanded)

18. Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE

Purlu K. M., Kocak M. N., Yolcu G., Perkitel I., Altuntaş İ., Demir İ.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.142, 2022 (SCI-Expanded) Sürdürülebilir Kalkınma

19. Systematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications & nbsp;

Badreddine S., Joshya R. S., DEMİR İ., Faouzi S., ALTUNTAŞ İ., Lagarde D., et al.

OPTICS AND LASER TECHNOLOGY , cilt.148, 2022 (SCI-Expanded)

20. Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP

Smiri B., DEMİR İ., Saidi F., ALTUNTAŞ İ., Hassen F., Maaref H., et al.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.140, 2022 (SCI-Expanded)

21. The effect of Si (111) substrate surface cleaning on growth rate and crystal quality of MOVPE grown AlN

Perkitel İ., Altuntaş İ., Demir İ.

GAZI UNIVERSITY JOURNAL OF SCIENCE , cilt.35, sa.1, ss.281-291, 2022 (ESCI)

22. ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties, and microstructural analysis

ŞENADIM TÜZEMEN E., ÖZER A., DEMİR İ., ALTUNTAŞ İ., ŞİMŞİR M.

JOURNAL OF THE AUSTRALIAN CERAMIC SOCIETY , cilt.57, sa.5, ss.1379-1388, 2021 (SCI-Expanded)

23. Combined effects of electric, magnetic, and intense terahertz laser fields on the nonlinear optical properties in GaAs/GaAlAs quantum well with exponentially confinement potential

Altuntas İ., Dakhlaoui H., Mora-Ramos M. E., Ungan F.

EUROPEAN PHYSICAL JOURNAL PLUS , cilt.136, sa.11, 2021 (SCI-Expanded)

24. Arsine Flow Rate Effect on the Low Growth Rate Epitaxial InGaAs Layers

Demir I., Altuntas İ., Elagoz S.

SEMICONDUCTORS , cilt.55, sa.10, ss.816-822, 2021 (SCI-Expanded)

25. Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy

Simsek I., Yolcu G., Kocak M., Purlu K., ALTUNTAŞ İ., DEMİR İ.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.32, sa.20, ss.25507-25515, 2021 (SCI-Expanded)

26. Effects of applied external fields on the nonlinear optical rectification, second, and third harmonic generation in a quantum well with exponentially confinement potential

Altuntas İ.

EUROPEAN PHYSICAL JOURNAL B , cilt.94, sa.9, 2021 (SCI-Expanded)

27. Numerical simulation of linear and nonlinear optical properties in heterostructure based on triple Gaussian quantum wells: effects of applied external fields and structural parameters

Dakhlaoui H., Altuntas İ., Mora-Ramos M. E., Ungan F.

EUROPEAN PHYSICAL JOURNAL PLUS , cilt.136, sa.8, 2021 (SCI-Expanded)

28. Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)

ALTUNTAŞ İ., Kocak M. N., Yolcu G., BUDAK H. F., KASAPOĞLU A. E., Horoz S., et al.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.127, 2021 (SCI-Expanded)

29. The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures

ALTUNTAŞ İ., ELAGÖZ S.

International Journal of Innovative Engineering Applications , cilt.5, sa.1, ss.6-10, 2021 (Hakemli Dergi)

30. XRD and photoluminescence measurements of GaN grown on dome shaped patterned sapphire with different NH3 flow rates

ALTUNTAŞ İ.

Cumhuriyet Science Journal , cilt.42, 2021 (Hakemli Dergi)

31. Optical and structural properties of In-rich InxGa1−xAs epitaxial layers on (1 0 0) InP for SWIR detectors

Smiri B., Ben Arbia M., Ilkay D., Saidi F., Othmen Z., Dkhil B., et al.

Materials Science and Engineering B: Solid-State Materials for Advanced Technology , cilt.262, 2020 (SCI-Expanded)

32. Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs

Genc M., Sheremet V., Elci M., Kasapoglu A. E., Altuntas İ., Demir İ., et al.

SUPERLATTICES AND MICROSTRUCTURES , cilt.128, ss.9-13, 2019 (SCI-Expanded)

33. Microstructural Evolution of MOVPE Grown GaN by the Carrier Gas

Demir İ., Altuntas İ., Kasapoglu A. E., Mobtakeri S., Guer E., Elagoz S.

SEMICONDUCTORS , cilt.52, sa.16, ss.2030-2038, 2018 (SCI-Expanded)

34. Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications

DEMİR İ., ALTUNTAŞ İ., Bulut B., Ezzedini M., ERGÜN Y., ELAGÖZ S.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.33, sa.5, 2018 (SCI-Expanded)

35. InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors

Sheremet V., Gheshlaghi N., Sozen M., Elci M., Sheremet N., Aydinli A., et al.

SUPERLATTICES AND MICROSTRUCTURES , cilt.116, ss.253-261, 2018 (SCI-Expanded)

36. Simulation of Highly Reflective GaN/AlxGa1-xN Distributed Bragg Reflector Structure for UV-Blue LEDs

Alaydin B. Ö., Altuntas İ., Tuzemen E., Elagoz S.

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS , cilt.13, sa.3, ss.387-393, 2018 (SCI-Expanded)

37. The effects of two-stage HT-GaN growth with different V/III ratios during 3D-2D transition

ALTUNTAŞ İ., DEMİR İ., KASAPOĞLU A. E., Mobtakeri S., GÜR E., ELAGÖZ S.

JOURNAL OF PHYSICS D-APPLIED PHYSICS , cilt.51, sa.3, 2018 (SCI-Expanded)

38. Two-step passivation for enhanced InGaN/GaN light emitting diodes with step graded electron injectors

Sheremet V., Genc M., Gheshlaghi N., Elci M., Sheremet N., Aydinli A., et al.

SUPERLATTICES AND MICROSTRUCTURES , cilt.113, ss.623-634, 2018 (SCI-Expanded)

39. The role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodes

Sheremet V., Genc M., Elci M., Sheremet N., Aydinli A., Altuntas İ., et al.

SUPERLATTICES AND MICROSTRUCTURES , cilt.111, ss.1177-1194, 2017 (SCI-Expanded)

40. Growth kinetics of O-polar BexMgyZn1-x-yO alloy: Role of Zn to Be and Mg flux ratio as a guide to growth at high temperature

Ullah M. B., Avrutin V., Nakagawara T., Hafiz S., Altuntas İ., Ozgur U., et al.

JOURNAL OF APPLIED PHYSICS , cilt.121, sa.18, 2017 (SCI-Expanded)

41. The hydrostatic pressure and temperature effects on hydrogenic impurity binding energies in GaAs/InxGa1-xAs/GaAs square quantum well

Baser P., Altuntas İ., Elagoz S.

SUPERLATTICES AND MICROSTRUCTURES , cilt.92, ss.210-216, 2016 (SCI-Expanded)

42. Structural and electrical properties of nitrogen-doped ZnO thin films

Tuzemen E., Kara K., ELAGÖZ S., TAKCI D. K., ALTUNTAŞ İ., ESEN R.

APPLIED SURFACE SCIENCE , cilt.318, ss.157-163, 2014 (SCI-Expanded)

43. In Concentration Dependence of Shallow Impurity Binding Enegry Under The Hydrostatic Pressure

BAŞER P., ALTUNTAŞ İ., ELAGÖZ S.

Marmara Üniversitesi Fen Bilimleri Dergisi , cilt.23, sa.4, ss.171-180, 2011 (Hakemli Dergi)

Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler 57

1. Comprehensive Growth and Characterization Study of GeOx/Si

Baghdedi D., Hopoğlu H., Sarıtaş S., Demir İ., Altuntaş İ., Abdelmoula N., et al.

5 th International Conference on Physical Chemistry & Functional Materials, Sivas, Türkiye, 23 - 25 Haziran 2022, ss.37, (Özet Bildiri)

2. Reflectance properties of Geo2 films grown on P-Si substrate deposited by Magnetron Sputtering

Baghdedi D., Hopoğlu H., Sarıtaş S., Demir İ., Altuntaş İ., Abdelmoula N., et al.

3nd International Conference on Light and Light-based Technologies (ICLLT), Ankara, Türkiye, 25 - 27 Mayıs 2022, ss.1-2, (Özet Bildiri)

3. Dependence of film thicknesses on the XRD, AFM and Transmittance Properties of NiOx

Hopoğlu H., Kaya D., Akyol M., Demir İ., Altuntaş İ., Ekicibil A., et al.

3nd International Conference on Light and Light-based Technologies (ICLLT), Ankara, Türkiye, 25 - 27 Mayıs 2022, ss.1-2, (Özet Bildiri)

4. EFFECT OF V/III RATIO ON AlN THIN FILMS GROWN ON PATTERNED SAPPHIRE SUBSTRATE

Özbakır F. K., ALTUNTAŞ İ., DEMİR İ.

the 13th International Scientific Research Congress, 11 - 12 Mart 2022, (Özet Bildiri)

5. Sputtered AlN for Distributed Bragg Reflectors Operating in the SWIR Wavelengths

Kaynar E., Hopoglu H., ALTUNTAŞ İ., DEMİR İ., SAYRAÇ M., Tüzemen E., et al.

Novel Optical Materials and Applications, NOMA 2022, Maastricht, Hollanda, 24 - 28 Temmuz 2022, (Tam Metin Bildiri)

6. The Effect of Growth Temperature on the Electrical Properties of Carbon-doped AlxGa1-xAs Grown by MOVPE

Kekül R., Altuntaş İ., Demir İ.

9th International Advanced Technologies Symposium (IATS'21), Elazığ, Türkiye, 27 - 28 Ekim 2021, ss.280-283, (Tam Metin Bildiri)

7. The Effect of Growth Temperature on the Electrical Features of Carbon-doped AlxGa1-xAs Grown by MOVPE

Kekül R., ALTUNTAŞ İ., DEMİR İ.

9TH INTERNATIONAL ADVANCED TECHNOLOGIES SYMPOSIUM (IATS'21), 27 - 28 Ekim 2021, (Tam Metin Bildiri)

8. Effect of Al Ratio on Optical and Structural Properties of MOCVD Grown AlGaAs/GaAs Epitaxial Structures

Kaynar E., ALTUNTAŞ İ., DEMİR İ.

9TH INTERNATIONAL ADVANCED TECHNOLOGIES SYMPOSIUM (IATS'21), 27 - 28 Ekim 2021

9. Influence of Pressure on ZnO/Al2O3 Produced by RF Magnetron Sputtering on Glass Substrate

Hopoğlu H., Aydınoğlu H., DEMİR İ., ALTUNTAŞ İ., ŞİMŞİR M., ŞENADIM TÜZEMEN E.

9TH INTERNATIONAL ADVANCED TECHNOLOGIES SYMPOSIUM (IATS'21), 27 - 28 Ekim 2021, (Tam Metin Bildiri)

10. Investigation of the Optical Properties of the Exponential Confinement GaAs/AlGaAs Quantum Well Under Applied External Fields

ALTUNTAŞ İ.

The 11th International Scientific Research Congress, 20 - 21 Ağustos 2021, (Özet Bildiri)

11. The influence of the different arsine flows on the properties of InGaAs layer grown on InP substrate by MOVPE

ALTUNTAŞ İ.

2. INTERNATIONAL ENGINEERING AND ARCHITECTURE CONGRESS, 22 - 23 Mayıs 2021, (Özet Bildiri)

12. MOVPE PALE Tekniği ile Safir Üzerine Si Katkılı AlN’ın Epitaksiyel Büyütülmesi ve Karakterizasyonu

Pürlü K. M., Perkitel İ., Altuntaş İ., Demir İ.

9. Uluslararası Bilimsel Araştırmalar Kongresi, Fen ve Mühendislik Bilimleri, Ankara, Türkiye, 12 - 13 Aralık 2020, ss.167, (Özet Bildiri)

13. Çekirdeklenme Tabakası Sıcaklığının MOCVD Yöntemi İle Büyütülen AlN İnce Filmlerin Kristal Kalitesi Üzerindeki Etkisi

Şimşek İ., Yolcu G., Koçak M. N., Altuntaş İ., Demir İ.

9. Uluslararası Bilimsel Araştırmalar Kongresi, Fen ve Mühendislik Bilimleri, Ankara, Türkiye, 12 - 13 Aralık 2020, ss.417-426, (Tam Metin Bildiri)

14. Si (111) Alttaşı Üzerine Büyütülmüş AIN İnce Filmlerin Spektroskopik Elipsometri Tekniği İle Optik Karakterizasyonu

Karakuş İ., Altuntaş İ., Demir İ.

9. Uluslararası Bilimsel Araştırmalar Kongresi, Fen ve Mühendislik Bilimleri, Ankara, Türkiye, 12 - 13 Aralık 2020, ss.125, (Özet Bildiri)

15. PECVD grown SiN photonic crystal micro-domes for the light extraction enhancement of GaN LEDs

Genç M., Sheremet V., Altuntaş İ., Demir İ., Gür E., Elagöz S., et al.

Conference on Gallium Nitride Materials and Devices XV, San-Francisco, Kostarika, 4 - 06 Şubat 2020, cilt.11280, (Tam Metin Bildiri)

16. Annealing effect on optical and electrical properties of p-GaN

ALTUN D., ALTUNTAŞ İ., DEMİR İ., GÜR E., ELAGÖZ S.

International Eurasian Conference on Science, Engineering and Technology (EurasianSciEnTech 2018), 22 - 23 Kasım 2018, (Özet Bildiri)

17. Defect Reduction in GaN Epilayer With Different V/III Ratio Grown On Patterned Sapphire Substrate

ALTUNTAŞ İ., DEMİR İ., KIZILBULUT A. A., Bulut B., ELAGÖZ S.

International Congress on Engineering and Architecture (ENAR-2018), 14 - 16 Kasım 2018, (Özet Bildiri)

18. Pulsed MOVPE Growth of High Quality AlGaN epilayers for Ultraviolet LED Applications

DEMİR İ., McClintock R., KOÇAK Y., ALTUNTAŞ İ., KASAPOĞLU A. E., GÜR E., et al.

European Conference on Laser Optics Photonics, 16 - 17 Temmuz 2018, (Özet Bildiri)

19. Growth and characterization of epitaxially grown GaN layer on patterned sapphire substrate

ALTUNTAŞ İ., DEMİR İ., KIZILBULUT A. A., Bulut B., ELAGÖZ S.

Lasers Optics Photonics and Atomic Plasma Science, 16 - 17 Temmuz 2018, (Özet Bildiri)

20. Comprehensive comparison of epitaxially grown GaN layer grown on conventional sapphire and patterned sapphire substrate

ALTUNTAŞ İ., DEMİR İ., KIZILBULUT A. A., Bulut B., ELAGÖZ S.

19th World Congress on Materials Science and Engineering, 11 - 13 Temmuz 2018, (Özet Bildiri)

21. Enhancement in blue LEDs with step graded electron injectors by InGaN stress compensation layers

Sheremet V., Gheshlaghi N., Sözen M., Elçi M., Sheremet N., AYDINLI A., et al.

19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), 3 - 08 Haziran 2018, (Özet Bildiri)

22. GROWTH AND CHARACTERIZATION STUDY ON STRAIN BALANCED QUANTUM CASCADE LASER STRUCTURES

DEMİR İ., ALTUNTAŞ İ., ELAGÖZ S.

4th International Conference on Engineering and Natural Sciences (ICENS), 2 - 06 Mayıs 2018, (Özet Bildiri)

23. EFFECT OF V/III RATIO ON C-PLANE GAN LAYERS WITH TWO STAGES HT-GAN

ALTUNTAŞ İ., DEMİR İ., ELAGÖZ S.

4th International Conference on Engineering and Natural Sciences (ICENS), 2 - 06 Mayıs 2018, (Özet Bildiri)

24. Defect Reduction of Epitaxially Grown GaN Layer on Patterned Sapphire Substrate

ALTUNTAŞ İ., DEMİR İ., KIZILBULUT A. A., BULUT B., ELAGÖZ S.

UV LED Technologies & Applications ICULTA -2018, 22 - 25 Nisan 2018, (Özet Bildiri)

25. High quality nitride materials (AlN and AlGaN) on Si and sapphire substrates and UV-LED applications

DEMİR İ., Li H., Robin Y., McClintock R., ALTUNTAŞ İ., ELAGÖZ S., et al.

8th International Conference and Exhibition on Lasers, Optics Photonics, LasVegas, Amerika Birleşik Devletleri, 15 - 17 Kasım 2017, cilt.4, ss.149, (Özet Bildiri)

26. The Effects of Two Stages GaN Growth with Different V/III Ratios During 3D-2D Transition

ALTUNTAŞ İ., DEMİR İ., ELAGÖZ S.

8th International Conference and Exhibition on LASERS, OPTICS PHOTONICS, Las Vegas, Amerika Birleşik Devletleri, 15 - 17 Kasım 2017, (Özet Bildiri)

27. The Influences of Carrier Gas Flow on Crystal Quality of GaN

DEMİR İ., ALTUNTAŞ İ., Bulut B., ELAGÖZ S.

Turkish Physical Society 33rd International Physics Congress, Bodrum/Muğla, Türkiye, 6 - 10 Eylül 2017

28. Simulation of Highly Reflective GaN/AlxGa1-xN DBR Structure for UV-Blue LEDs

ALAYDİN B. Ö., ALTUNTAŞ İ., ŞENADIM TÜZEMEN E., ELAGÖZ S.

4th INTERNATIONAL CONFERENCE ON MATERIALS SCIENCE AND NANOTECHNOLOGY FOR NEXT GENERATION (MSNG2017), 28 - 01 Haziran 2017, (Özet Bildiri)

29. Growth of High Quality InGaN/GaN Multi Quantum Well via MOCVD and Introducing a Technique for Precise Thickness Determination

ALTUNTAŞ İ., DEMİR İ., ELAGÖZ S.

17th European Workshop on Metalorganic Vapour Phase Epitaxt (EW-MOVPE17), Greonable, Fransa, 18 - 21 Haziran 2017, (Özet Bildiri)

52. Epitaxial Growth by Metal Organic Chemical Vapor Deposition MOCVD and Structural Characterization of GaAs Films on Ge Substrates

DEMİR İ., ALTUNTAŞ İ., ALAYDİN B. Ö., BOZ M. A., KARKI H. D., ELAGÖZ S.

NanoTR 9, 24 - 28 Temmuz 2013, (Tam Metin Bildiri)

53. Structural and electrical properties of nitrogen doped ZnO thin films

ŞENADIM TÜZEMEN E., KARA K., ELAGÖZ S., TAKCI D. K., ALTUNTAŞ İ.

Nanotr-9-Erzurum, 24 - 28 Haziran 2013, (Tam Metin Bildiri)

54. EPİTAXİAL GROWTH BY METAL ORGANİC VAPOR DEPOSİTİON (MOCVD) AND STRUCTURAL CHARACTERİZATİON OF GAAS FİLMS ON GE SUBSTRATES

DEMİR İ., ALTUNTAŞ İ., ALAYDİN B. Ö., KIZILBULUT A. A., ELAGÖZ S.

Nano-tr 9, Erzurum, Türkiye, 28 Haziran 2013, (Özet Bildiri)

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