Yayınlar & Eserler

SCI, SSCI ve AHCI İndekslerine Giren Dergilerde Yayınlanan Makaleler

Diğer Dergilerde Yayınlanan Makaleler

Hakemli Kongre / Sempozyum Bildiri Kitaplarında Yer Alan Yayınlar

Electronic characteristics of triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on Al and In concentration

5th International Conference on Materials Science and Advanced-Nanotechnologies For Next Generation (MSNG-2018), 4 - 06 Ekim 2018

Dependence on Well Widths of the Electronic Features of Triple GaAlAs/GaAs and GaInAs/GaAs Quantum Wells

5th International Conference on Materials Science and Advanced-Nanotechnologies For Next Generation (MSNG-2018), Nevşehir, Türkiye, 4 - 06 Ekim 2018

Second-Harmonic Generation Susceptibility in Asymmetric Triple Delta-Doped GaAs Structures

5th International Conference on Materials Science and Advanced-Nanotechnologies For Next Generation (MSNG-2018) , Nevşehir, Türkiye, 4 - 06 Ekim 2018, ss.309

Electronic characteristics of triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on Al and In concentration

5th International Conference on Materials Science and Advanced-Nanotechnologies For Next Generation (MSNG-2018) , Nevşehir, Türkiye, 4 - 06 Ekim 2018, ss.308

Effect of electric field on intersubband second order nonlinear transitions in single, double and triple delta-doped GaAs structures

4th International Conference on Engineering and Natural Sciences (ICENS-2018) Kiev, UKRAYNA, Kyyiv, Ukrayna, 2 - 06 Mayıs 2018, ss.624-629

Depending on Al and In concentration of the electronic properties of asymmetric double GaAlAs/GaAs and GaInAs/GaAs quantum wells

4th International Conference on Engineering and Natural Sciences (ICENS-2018) , Kyyiv, Ukrayna, 2 - 06 Mayıs 2018, ss.630-635

Nonlinear transitions in single double and triple doped GaAs structures

16th International Balkan Workshop on Applied Physics and Materials Science (IBWAP 2016), Constanta, Romania , Constanta, Romanya, 7 - 09 Temmuz 2016

N katkılı çift simetrik Ga1 xAlxAs GaAs kuantum kuyularının elektronik özellikleri üzerinde engel genişliğinin etkisi

10. Yoğun Madde Fiziği Ankara Toplantısı 14 Kasım 2003, Hacettepe Üni., ANKARA., Türkiye, 14 Kasım 2003

Katkılı tabakalar arasındaki uzaklığa bağlı olarak çift Si delta katkılı GaAs

8. Yoğun Madde Fiziği Ankara Toplantısı: Bilkent Üniversitesi, Ankara., Türkiye, 09 Kasım 2001

In-plane photoconductive properties in Si delta-doped GaAs structure

V. International Workshop on Low Dimensional Semiconductors: Physics and Devices; Scattering Mechanism and Device Performance, Antalya, Türkiye, 08 Eylül 1998, ss.27

Kitap & Kitap Bölümleri

Metrikler

Yayın

83

Atıf (WoS)

827

H-İndeks (WoS)

19

Atıf (Scopus)

820

H-İndeks (Scopus)

18

Proje

12

Tez Danışmanlığı

4

Açık Erişim

11
BM Sürdürülebilir Kalkınma Amaçları