Publications & Works

Articles Published in Journals That Entered SCI, SSCI and AHCI Indexes

NONLINEAR TRANSITIONS IN SINGLE, DOUBLE, AND TRIPLE delta-DOPED GaAs STRUCTURES

ROMANIAN JOURNAL OF PHYSICS, vol.62, 2017 (Journal Indexed in SCI) identifier identifier

Nonlinear intersubband transitions in different shaped quantum wells under intense laser field

SUPERLATTICES AND MICROSTRUCTURES, vol.82, pp.303-312, 2015 (Journal Indexed in SCI) identifier

Effect of an intense laser field on the holes in graded quantum wells

EUROPEAN PHYSICAL JOURNAL PLUS, vol.128, no.8, 2013 (Journal Indexed in SCI) identifier identifier

Linear and nonlinear optical absorption in different graded quantum wells modulated by intense laser field

SUPERLATTICES AND MICROSTRUCTURES, vol.52, no.5, pp.1010-1019, 2012 (Journal Indexed in SCI) identifier identifier

Intersubband transitions and refractive index changes in coupled double quantum well with different well shapes

SUPERLATTICES AND MICROSTRUCTURES, vol.50, no.4, pp.350-358, 2011 (Journal Indexed in SCI) identifier identifier

Effect of Magnetic Field on a p-Type delta-Doped GaAs Layer

CHINESE PHYSICS LETTERS, vol.27, no.7, 2010 (Journal Indexed in SCI) Sustainable Development identifier identifier

Nonlinear optical absorption in graded quantum wells modulated by electric field and intense laser field

EUROPEAN PHYSICAL JOURNAL B, vol.75, no.2, pp.197-203, 2010 (Journal Indexed in SCI) identifier identifier

Optical intersubband transitions in double Si delta-doped GaAs under an applied magnetic field

SUPERLATTICES AND MICROSTRUCTURES, vol.46, no.5, pp.752-759, 2009 (Journal Indexed in SCI) identifier identifier

Effect of the intense laser field on the valance band for Ga1-xAlxAs/GaAs heterostructure

SUPERLATTICES AND MICROSTRUCTURES, vol.45, no.1, pp.16-21, 2009 (Journal Indexed in SCI) identifier identifier

Electronic properties of p-type delta-doped GaAs structure under electric field

CHINESE PHYSICS LETTERS, vol.25, no.4, pp.1415-1418, 2008 (Journal Indexed in SCI) Sustainable Development identifier identifier

Subband structure of p-type delta-doped GaAs as dependent on the acceptor concentration and the layer thickness

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, vol.41, no.3, pp.195-200, 2008 (Journal Indexed in SCI) Sustainable Development identifier identifier

Intersubband transitions in an asymmetric double quantum well

SUPERLATTICES AND MICROSTRUCTURES, vol.41, no.1, pp.36-43, 2007 (Journal Indexed in SCI) identifier identifier

Intersubband optical absorption in double quantum well under intense laser field

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, vol.35, no.1, pp.1-5, 2006 (Journal Indexed in SCI) identifier identifier

Intersubband transitions in quantum wells under intense laser field

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, vol.80, no.3, pp.541-544, 2005 (Journal Indexed in SCI) identifier identifier

The triple Si delta-doped GaAs structure

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, vol.80, no.1, pp.167-171, 2005 (Journal Indexed in SCI) identifier identifier

Subband structure and band bending in symmetric modulation-doped double quantum wells

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, vol.29, no.1, pp.27-31, 2005 (Journal Indexed in SCI) Creative Commons License identifier identifier

The dependence of the intersubband transitions in square and graded QWs on intense laser fields

SOLID STATE COMMUNICATIONS, vol.132, no.7, pp.497-502, 2004 (Journal Indexed in SCI) identifier identifier

Intersubband optical absorption in quantum wells under applied electric and intense laser fields

SURFACE REVIEW AND LETTERS, vol.11, no.3, pp.297-303, 2004 (Journal Indexed in SCI) identifier identifier

Intersubband transitions of Si delta-doped GaAs layer for different donor distribution models

CHINESE PHYSICS LETTERS, vol.21, no.5, pp.930-933, 2004 (Journal Indexed in SCI) identifier identifier

Intersubband optical absorption of double Si delta-doped GaAs layers

SUPERLATTICES AND MICROSTRUCTURES, vol.35, pp.95-104, 2004 (Journal Indexed in SCI) identifier identifier

Influence of an applied electric field on the electronic properties of Si delta-doped GaAs

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, vol.24, no.3, pp.189-194, 2003 (Journal Indexed in SCI) Creative Commons License identifier identifier

Intersubband transitions for single, double and triple Si delta-doped GaAs layers

JOURNAL OF PHYSICS D-APPLIED PHYSICS, vol.36, no.20, pp.2457-2464, 2003 (Journal Indexed in SCI) Creative Commons License identifier identifier

Electronic structure of two coupled Si delta-doped GaAs as dependent on the donor thickness

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, vol.77, pp.427-431, 2003 (Journal Indexed in SCI) identifier identifier

The electric field effects on intersubband optical absorption of Si delta-doped GaAs layer

SOLID STATE COMMUNICATIONS, vol.126, no.11, pp.605-609, 2003 (Journal Indexed in SCI) identifier identifier

Electronic properties of two coupled Si delta-doped GaAs structures

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, vol.21, no.2, pp.91-95, 2003 (Journal Indexed in SCI) Creative Commons License identifier identifier

Influence of temperature on the electronic properties of Si delta-doped GaAs structures

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, vol.21, no.2, pp.97-101, 2003 (Journal Indexed in SCI) Creative Commons License identifier identifier

Si delta-doped GaAs structure with different dopant distribution models

JOURNAL OF APPLIED PHYSICS, vol.91, no.4, pp.2118-2122, 2002 (Journal Indexed in SCI) identifier identifier

The self-consistent calculation of Si delta-doped GaAs structures

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, vol.73, no.6, pp.749-754, 2001 (Journal Indexed in SCI) identifier identifier

Electronic properties of Si delta-doped GaAs under an applied electric field

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol.16, no.6, pp.421-426, 2001 (Journal Indexed in SCI) Creative Commons License identifier identifier

Electronic subband of single Si delta-doped GaAs structures

SUPERLATTICES AND MICROSTRUCTURES, vol.28, no.1, pp.35-45, 2000 (Journal Indexed in SCI) Creative Commons License identifier identifier

Articles Published in Other Journals

Electronic features of Gaussian quantum well as depending on the parameters

Cumhuriyet Science Journal, vol.41, no.2, pp.462-466, 2020 (Other Refereed National Journals)

Electronic properties of double GaAlAs/GaAs and GaInAs/GaAs quantumwells as dependent on well width

Cumhuriyet Science Journal, vol.40, no.2, pp.465-470, 2019 (Other Refereed National Journals) Creative Commons License

Intersub-band Second Order Nonlinear Transitions in Asymmetric Double Delta-Doped GaAs Structures

Cumhuriyet Science Journal, vol.39, no.3, pp.720-727, 2018 (Refereed Journals of Other Institutions) Creative Commons License

The temperature dependence of the electronic structure of Si delta-doped GaAs

Turkish Journal of Physics, vol.26, pp.465-471, 2002 (Other Refereed National Journals)

Refereed Congress / Symposium Publications in Proceedings

Electronic characteristics of triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on Al and In concentration

5th International Conference on Materials Science and Advanced-Nanotechnologies For Next Generation (MSNG-2018), 4 - 06 October 2018

Electronic characteristics of triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on Al and In concentration

5th International Conference on Materials Science and Advanced-Nanotechnologies For Next Generation (MSNG-2018) , Nevşehir, Turkey, 4 - 06 October 2018, pp.308

Second-Harmonic Generation Susceptibility in Asymmetric Triple Delta-Doped GaAs Structures

5th International Conference on Materials Science and Advanced-Nanotechnologies For Next Generation (MSNG-2018) , Nevşehir, Turkey, 4 - 06 October 2018, pp.309

Effect of electric field on intersubband second order nonlinear transitions in single, double and triple delta-doped GaAs structures

4th International Conference on Engineering and Natural Sciences (ICENS-2018) Kiev, UKRAYNA, Kyyiv, Ukraine, 2 - 06 May 2018, pp.624-629

Depending on Al and In concentration of the electronic properties of asymmetric double GaAlAs/GaAs and GaInAs/GaAs quantum wells

4th International Conference on Engineering and Natural Sciences (ICENS-2018) , Kyyiv, Ukraine, 2 - 06 May 2018, pp.630-635

Second Order Nonlinear Intersubband Transitions in Double Delta Doped GaAsStructures

MSNG 2017, Sarajevo, Bosnia And Herzegovina, 28 - 30 June 2017, pp.247

Nonlinear transitions in single double and triple doped GaAs structures

16th International Balkan Workshop on Applied Physics and Materials Science (IBWAP 2016), Constanta, Romania , Constanta, Romania, 7 - 09 July 2016

N katkılı çift simetrik Ga1 xAlxAs GaAs kuantum kuyularının elektronik özellikleri üzerinde engel genişliğinin etkisi

10. Yoğun Madde Fiziği Ankara Toplantısı 14 Kasım 2003, Hacettepe Üni., ANKARA., Turkey, 14 November 2003

Katkılı tabakalar arasındaki uzaklığa bağlı olarak çift Si delta katkılı GaAs

8. Yoğun Madde Fiziği Ankara Toplantısı: Bilkent Üniversitesi, Ankara., Turkey, 09 November 2001

In-plane photoconductive properties in Si delta-doped GaAs structure

V. International Workshop on Low Dimensional Semiconductors: Physics and Devices; Scattering Mechanism and Device Performance, Antalya, Turkey, 08 September 1998, pp.27

Books & Book Chapters