Publications & Works

Published journal articles indexed by SCI, SSCI, and AHCI

Optical and structural properties of In-rich InxGa1−xAs epitaxial layers on (1 0 0) InP for SWIR detectors

Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol.262, 2020 (SCI-Expanded) identifier identifier

V/III ratio effects on high quality InAlAs for quantum cascade laser structures

SUPERLATTICES AND MICROSTRUCTURES, vol.104, pp.140-148, 2017 (SCI-Expanded) identifier identifier

Articles Published in Other Journals

Refereed Congress / Symposium Publications in Proceedings

Comprehensive Growth and Characterization Study of GeOx/Si

5 th International Conference on Physical Chemistry & Functional Materials, Sivas, Turkey, 23 - 25 June 2022, pp.37

Dependence of film thicknesses on the XRD, AFM and Transmittance Properties of NiOx

3nd International Conference on Light and Light-based Technologies (ICLLT), Ankara, Turkey, 25 - 27 May 2022, pp.1-2

Reflectance properties of Geo2 films grown on P-Si substrate deposited by Magnetron Sputtering

3nd International Conference on Light and Light-based Technologies (ICLLT), Ankara, Turkey, 25 - 27 May 2022, pp.1-2

Optical and electrical characterızatıon of InGaAs epitaxial layers

3rd International Eurasian Conference on Science, Engineering and Technology, Turkey, 15 - 17 December 2021

Fabrication and Characterisation of InGaAs Gunn Diode-Based Light Emitting Device

3rd International Eurasian Conference on Science, Engineering and Technology, Turkey, 15 - 17 December 2021

The Effect of Growth Temperature on the Electrical Properties of Carbon-doped AlxGa1-xAs Grown by MOVPE

9th International Advanced Technologies Symposium (IATS'21), Elazığ, Turkey, 27 - 28 October 2021, pp.280-283

Si (111) Alttaşı Üzerine Büyütülmüş AIN İnce Filmlerin Spektroskopik Elipsometri Tekniği İle Optik Karakterizasyonu

9. Uluslararası Bilimsel Araştırmalar Kongresi, Fen ve Mühendislik Bilimleri, Ankara, Turkey, 12 - 13 December 2020, pp.125

MOVPE PALE Tekniği ile Safir Üzerine Si Katkılı AlN’ın Epitaksiyel Büyütülmesi ve Karakterizasyonu

9. Uluslararası Bilimsel Araştırmalar Kongresi, Fen ve Mühendislik Bilimleri, Ankara, Turkey, 12 - 13 December 2020, pp.167

Çekirdeklenme Tabakası Sıcaklığının MOCVD Yöntemi İle Büyütülen AlN İnce Filmlerin Kristal Kalitesi Üzerindeki Etkisi

9. Uluslararası Bilimsel Araştırmalar Kongresi, Fen ve Mühendislik Bilimleri, Ankara, Turkey, 12 - 13 December 2020, pp.417-426

PECVD grown SiN photonic crystal micro-domes for the light extraction enhancement of GaN LEDs

Conference on Gallium Nitride Materials and Devices XV, San-Francisco, Costa Rica, 4 - 06 February 2020, vol.11280 identifier identifier

Annealing effect on optical and electrical properties of p-GaN

International Eurasian Conference on Science, Engineering and Technology (EurasianSciEnTech 2018), 22 - 23 November 2018

Growth temperature effect investigation of pulsed atomic layer epitaxy grown AlN on non-patterned silicon substrate

International Congress on Engineering and Architecture (ENAR-2018), 14 - 16 November 2018

Sandwich method to grow high quality AlN by MOCVD

19th World Congress on Materials Science and Engineering, 11 - 13 June 2018

GROWTH AND CHARACTERIZATION STUDY ON STRAIN BALANCED QUANTUM CASCADE LASER STRUCTURES

4th International Conference on Engineering and Natural Sciences (ICENS), 2 - 06 May 2018

EFFECT OF V/III RATIO ON C-PLANE GAN LAYERS WITH TWO STAGES HT-GAN

4th International Conference on Engineering and Natural Sciences (ICENS), 2 - 06 May 2018

The Effects of Two Stages GaN Growth with Different V/III Ratios During 3D-2D Transition

8th International Conference and Exhibition on LASERS, OPTICS PHOTONICS, Las Vegas, United States Of America, 15 - 17 November 2017

High quality nitride materials (AlN and AlGaN) on Si and sapphire substrates and UV-LED applications

8th International Conference and Exhibition on Lasers, Optics Photonics, LasVegas, United States Of America, 15 - 17 November 2017, vol.4, pp.149

The Influences of Carrier Gas Flow on Crystal Quality of GaN

Turkish Physical Society 33rd International Physics Congress, Bodrum/Muğla, Turkey, 6 - 10 September 2017

MOCVD Grown InGaAs/InAlAs Superlattices for Quantum Cascade Laser Applications

International Congress on Semiconductor Materials and Devices, Konya, Turkey, 17 - 19 August 2017, pp.6

Growth of High Quality InGaN/GaN Multi Quantum Well via MOCVD and Introducing a Technique for Precise Thickness Determination

17th European Workshop on Metalorganic Vapour Phase Epitaxt (EW-MOVPE17), Greonable, France, 18 - 21 June 2017

Using Source Delay Technique to Grow High Quality InAlAs/InGaAs superlattices by MOCVD

17th European Workshop on Metalorganic Vapour Phase Epitaxt (EW-MOVPE17), Greonable, France, 18 - 21 June 2017

Improved GaN Quality by Two Stages Ammonia Flow

III International Conference on Engineering and Natural Science (ICENS), Budapest, Hungary, 3 - 07 May 2017

STUDY OF DEFECTS IN GAN EPILAYER GROWN ON PATTERNED SAPPHIRE SUBSTRATE

III International Conference on Engineering and Natural Science (ICENS), Budapest, Hungary, 3 - 07 May 2017

Optical Comparison of MOCVD Grown GaN Layers on Flat and Patterned Sapphire Substrates

III International Conference on Engineering and Natural Science (ICENS), Budapest, Hungary, 3 - 07 May 2017

The Effects of Carrier Gas on 3D 2D Transition of GaN

3th International Nanoscience and Nanotechnolgy for Next Generation, Antalya, Turkey, 20 - 23 October 2016

High Quality InGaAs InAlAs Superlattices Growth by MOCVD

3th International Nanoscience and Nanotechnolgy for Next Generation, 20 - 23 October 2016

High Quality InGaAs/InAlAs Superlattices Growth by MOCVD

3th NANOSCIENCE NANOTECHNOLOGY FOR NEXT GENERATION, 1 - 03 October 2016

Growth And Characterization of High Aluminium Alloy Concentration x 0 9 AlxGa1 xAs for Optoelectronic Application

Turkish Physical Society 32nd International Physics Congress, Muğla, Turkey, 6 - 09 September 2016

AMMONIA PRE FLOW EFFECTS IN GROWTH OF EPITAXIAL GAN ON SAPPHIRE SUBSTRATE

Türk Fizik Derneği 32. Uluslararası Fizik Kongresi (TFD32), Muğla/Bodrum, Turkey, 6 - 09 September 2016

EFFECT OF RECRYSTALLIZATION TIME ON TWO STEP MOCVD GROWN GAN

Türk Fizik Derneği 32. Uluslararası Fizik Kongresi (TFD32), Muğla/Bodrum, Turkey, 6 - 09 September 2016

V III Ratio Effect on Electrical and Optical Properties of Nearly Lattice Matched InxGa1 xAs Epilayers on InP

Turkish Physical Society 32nd International Physics Congress, Muğla, Turkey, 6 - 09 September 2016

THE EFFECTS OF NUCLEATION LAYER THICKNESS ON QUALITY OF GAN FILM

Türk Fizik Derneği 32. Uluslararası Fizik Kongresi (TFD32), Muğla/Bodrum, Turkey, 6 - 09 September 2016

A systematical study of nucleation layer growth temperature effectrs of GaN Buffer Layer

TFD32, Türk Fizik Derneği 32. Uluslararası Fizik Kongresi 6-9 Eylül 2016, Muğla Bodrum, 6 - 09 September 2016

Structural Optical Electrical and Magnetic Properties of Undoped and Ni Doped CdZnS

Turkish Physical Society 32nd International Physics Congress, Muğla, Turkey, 6 - 09 September 2016

Effect of Recrystallization Time on Two Steps MOCVD Grown GaN

Turkish Physical Society 32nd International Physics Congress, Muğla, Turkey, 6 - 09 September 2016

Determine The refractive Index of Wurtzite GaN On Sapphire By Spectroscopic Ellipsometry

16th International Balkan Workshop on Applied Physics and Materials Science (IBWAP 2016), Constanta, Romania, 6 - 09 July 2016

Ellipsometry and Photoluminescence Characterization of MOCVD Grown AlxGa1 xAs Layers x 0 21 0 33 0 42

16th International Balkan Workshop on Applied Physics and Materials Science (IBWAP 2016), Constanta, Romania, 7 - 09 July 2016

Optical and Structural Properties of Lattice Matched and Slightly Lattice Mismatched MOCVD Grown InxGa1 x Epilayers

16th International Balkan Workshop on Applied Physics and Materials Science (IBWAP 2016), Constanta, Romania, 7 - 09 July 2016

V III Ratio Effect on Doping of High Quality InAlAs for Quantum Cascade Laser Structures

16th International Balkan Workshop on Applied Physics and Materials Science (IBWAP 2016), Constanta, Romania, 7 - 09 July 2016

Optical and Structural Characterization of AlxGa1xAs GaAs Epilayers

NanoTR-12 Nanoscience and Nanotechnology Conference, Gebze, Turkey, 3 - 05 June 2016

Growth Studies Of Lattice Matched GaInAs and AlInAs Layers for Quantum Cascade Laser by MOCVD

9th Internationla Physics Conference Of The Balkan Physical Union-BPU9, 24-27 aUGUST 2015, 24 - 27 August 2015