Publications & Works

Articles Published in Journals That Entered SCI, SSCI and AHCI Indexes

Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy

Journal Of Materials Science-Materials In Electronics, vol.32, pp.25507-25515, 2021 (Journal Indexed in SCI Expanded)

Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.127, no.105733, pp.105733, 2021 (Journal Indexed in SCI Expanded)

Optical and structural properties of In-rich InxGa1−xAs epitaxial layers on (1 0 0) InP for SWIR detectors

Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol.262, 2020 (Journal Indexed in SCI) identifier identifier

AlGaN/AlN MOVPE heteroepitaxy: pulsed co-doping SiH4 and TMIn

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol.34, no.7, 2019 (Journal Indexed in SCI) identifier identifier

The contribution of AsH3: Pre-flow and V/III ratio effects on heteroepitaxially grown GaAs/Ge

SUPERLATTICES AND MICROSTRUCTURES, vol.128, pp.1-8, 2019 (Journal Indexed in SCI) identifier identifier

High brightness ultraviolet light-emitting diodes grown on patterned silicon substrate

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.90, pp.87-91, 2019 (Journal Indexed in SCI) identifier identifier

Sandwich method to grow high quality AlN by MOCVD

JOURNAL OF PHYSICS D-APPLIED PHYSICS, vol.51, no.8, 2018 (Journal Indexed in SCI) identifier identifier

V/III ratio effects on high quality InAlAs for quantum cascade laser structures

SUPERLATTICES AND MICROSTRUCTURES, vol.104, pp.140-148, 2017 (Journal Indexed in SCI) identifier identifier

Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, vol.214, no.4, 2017 (Journal Indexed in SCI) identifier identifier

Articles Published in Other Journals

Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates

Cumhuriyet Science Journal, vol.39, no.3, pp.728-733, 2018 (Other Refereed National Journals)

Optical and Structural Properties of MOCVD Grown InxGa1-xAs Epilayers

Cumhuriyet Science Journal, vol.38, no.4, pp.681-689, 2017 (Refereed Journals of Other Institutions)

Growth of InGaAs/InAlAs superlattices by MOCVD and precise thickness determination via HRXRD

GAZI UNIVERSITY JOURNAL OF SCIENCE, vol.29, no.4, pp.947-951, 2016 (Journal Indexed in ESCI) identifier identifier

Refereed Congress / Symposium Publications in Proceedings

The Effect of Growth Temperature on the Electrical Properties of Carbon-doped AlxGa1-xAs Grown by MOVPE

9th International Advanced Technologies Symposium (IATS'21), Elazığ, Turkey, 27 - 28 October 2021, pp.280-283

Effect of Al ratio on optical and structural properties of MOCVD Grown AlGaAs/GaAs epitaxial structures

9th International Advanced Technologies Symposium (IATS'21), Elazığ, Turkey, 27 - 28 October 2021, pp.235-239

Çekirdeklenme Tabakası Sıcaklığının MOCVD Yöntemi İle Büyütülen AlN İnce Filmlerin Kristal Kalitesi Üzerindeki Etkisi

9. Uluslararası Bilimsel Araştırmalar Kongresi, Fen ve Mühendislik Bilimleri, Ankara, Turkey, 12 - 13 December 2020, pp.417-426

MOVPE PALE Tekniği ile Safir Üzerine Si Katkılı AlN’ın Epitaksiyel Büyütülmesi ve Karakterizasyonu

9. Uluslararası Bilimsel Araştırmalar Kongresi, Fen ve Mühendislik Bilimleri, Ankara, Turkey, 12 - 13 December 2020, pp.167

Si (111) Alttaşı Üzerine Büyütülmüş AIN İnce Filmlerin Spektroskopik Elipsometri Tekniği İle Optik Karakterizasyonu

9. Uluslararası Bilimsel Araştırmalar Kongresi, Fen ve Mühendislik Bilimleri, Ankara, Turkey, 12 - 13 December 2020, pp.125

PECVD grown SiN photonic crystal micro-domes for the light extraction enhancement of GaN LEDs

Gallium Nitride Materials and Devices XV 2020, California, United States Of America, 4 - 06 February 2020, vol.11280 identifier identifier

Annealing effect on optical and electrical properties of p-GaN

International Eurasian Conference on Science, Engineering and Technology (EurasianSciEnTech 2018), 22 - 23 November 2018

Growth temperature effect investigation of pulsed atomic layer epitaxy grown AlN on non-patterned silicon substrate

International Congress on Engineering and Architecture (ENAR-2018), 14 - 16 November 2018

Sandwich method to grow high quality AlN by MOCVD

19th World Congress on Materials Science and Engineering, 11 - 13 June 2018

EFFECT OF V/III RATIO ON C-PLANE GAN LAYERS WITH TWO STAGES HT-GAN

4th International Conference on Engineering and Natural Sciences (ICENS), 2 - 06 May 2018

GROWTH AND CHARACTERIZATION STUDY ON STRAIN BALANCED QUANTUM CASCADE LASER STRUCTURES

4th International Conference on Engineering and Natural Sciences (ICENS), 2 - 06 May 2018

The Effects of Two Stages GaN Growth with Different V/III Ratios During 3D-2D Transition

8th International Conference and Exhibition on LASERS, OPTICS PHOTONICS, Las Vegas, United States Of America, 15 - 17 November 2017

High quality nitride materials (AlN and AlGaN) on Si and sapphire substrates and UV-LED applications

8th International Conference and Exhibition on Lasers, Optics Photonics, LasVegas, United States Of America, 15 - 17 November 2017, vol.4, pp.149

The Influences of Carrier Gas Flow on Crystal Quality of GaN

Turkish Physical Society 33rd International Physics Congress, Bodrum/Muğla, Turkey, 6 - 10 September 2017

MOCVD Grown InGaAs/InAlAs Superlattices for Quantum Cascade Laser Applications

International Congress on Semiconductor Materials and Devices, Konya, Turkey, 17 - 19 August 2017, pp.6

Growth of High Quality InGaN/GaN Multi Quantum Well via MOCVD and Introducing a Technique for Precise Thickness Determination

17th European Workshop on Metalorganic Vapour Phase Epitaxt (EW-MOVPE17), Greonable, France, 18 - 21 June 2017

Using Source Delay Technique to Grow High Quality InAlAs/InGaAs superlattices by MOCVD

17th European Workshop on Metalorganic Vapour Phase Epitaxt (EW-MOVPE17), Greonable, France, 18 - 21 June 2017

Optical Comparison of MOCVD Grown GaN Layers on Flat and Patterned Sapphire Substrates

III International Conference on Engineering and Natural Science (ICENS), Budapest, Hungary, 3 - 07 May 2017

STUDY OF DEFECTS IN GAN EPILAYER GROWN ON PATTERNED SAPPHIRE SUBSTRATE

III International Conference on Engineering and Natural Science (ICENS), Budapest, Hungary, 3 - 07 May 2017

Improved GaN Quality by Two Stages Ammonia Flow

III International Conference on Engineering and Natural Science (ICENS), Budapest, Hungary, 3 - 07 May 2017

Structural Comparison of Epitaxially Grown GaN Layer on Conventional Sapphire and Patterned Sapphire Substrates

III International Conference on Engineering and Natural Science (ICENS), Budapest, Hungary, 3 - 07 May 2017

The Effects of Carrier Gas on 3D 2D Transition of GaN

3th International Nanoscience and Nanotechnolgy for Next Generation, Antalya, Turkey, 20 - 23 October 2016

High Quality InGaAs InAlAs Superlattices Growth by MOCVD

3th International Nanoscience and Nanotechnolgy for Next Generation, 20 - 23 October 2016

High Quality InGaAs/InAlAs Superlattices Growth by MOCVD

3th NANOSCIENCE NANOTECHNOLOGY FOR NEXT GENERATION, 1 - 03 October 2016

V III Ratio Effect on Electrical and Optical Properties of Nearly Lattice Matched InxGa1 xAs Epilayers on InP

Turkish Physical Society 32nd International Physics Congress, Muğla, Turkey, 6 - 09 September 2016

THE EFFECTS OF NUCLEATION LAYER THICKNESS ON QUALITY OF GAN FILM

Türk Fizik Derneği 32. Uluslararası Fizik Kongresi (TFD32), Muğla/Bodrum, Turkey, 6 - 09 September 2016

EFFECT OF RECRYSTALLIZATION TIME ON TWO STEP MOCVD GROWN GAN

Türk Fizik Derneği 32. Uluslararası Fizik Kongresi (TFD32), Muğla/Bodrum, Turkey, 6 - 09 September 2016

Growth And Characterization of High Aluminium Alloy Concentration x 0 9 AlxGa1 xAs for Optoelectronic Application

Turkish Physical Society 32nd International Physics Congress, Muğla, Turkey, 6 - 09 September 2016

A systematical study of nucleation layer growth temperature effectrs of GaN Buffer Layer

TFD32, Türk Fizik Derneği 32. Uluslararası Fizik Kongresi 6-9 Eylül 2016, Muğla Bodrum, 6 - 09 September 2016

Structural Optical Electrical and Magnetic Properties of Undoped and Ni Doped CdZnS

Turkish Physical Society 32nd International Physics Congress, Muğla, Turkey, 6 - 09 September 2016

Effect of Recrystallization Time on Two Steps MOCVD Grown GaN

Turkish Physical Society 32nd International Physics Congress, Muğla, Turkey, 6 - 09 September 2016

AMMONIA PRE FLOW EFFECTS IN GROWTH OF EPITAXIAL GAN ON SAPPHIRE SUBSTRATE

Türk Fizik Derneği 32. Uluslararası Fizik Kongresi (TFD32), Muğla/Bodrum, Turkey, 6 - 09 September 2016

Optical and Structural Properties of Lattice Matched and Slightly Lattice Mismatched MOCVD Grown InxGa1 x Epilayers

16th International Balkan Workshop on Applied Physics and Materials Science (IBWAP 2016), Constanta, Romania, 7 - 09 July 2016

Determine The refractive Index of Wurtzite GaN On Sapphire By Spectroscopic Ellipsometry

16th International Balkan Workshop on Applied Physics and Materials Science (IBWAP 2016), Constanta, Romania, 6 - 09 July 2016

V III Ratio Effect on Doping of High Quality InAlAs for Quantum Cascade Laser Structures

16th International Balkan Workshop on Applied Physics and Materials Science (IBWAP 2016), Constanta, Romania, 7 - 09 July 2016

Ellipsometry and Photoluminescence Characterization of MOCVD Grown AlxGa1 xAs Layers x 0 21 0 33 0 42

16th International Balkan Workshop on Applied Physics and Materials Science (IBWAP 2016), Constanta, Romania, 7 - 09 July 2016

Optical and Structural Characterization of AlxGa1xAs GaAs Epilayers

NanoTR-12 Nanoscience and Nanotechnology Conference, Gebze, Turkey, 3 - 05 June 2016