Doç. Dr. İLKAY DEMİR

Yayın Ağı

SCI, SSCI ve AHCI İndekslerine Giren Dergilerde Yayınlanan Makaleler

Characterization of SiNx grown at different nitrogen flow and prediction of refractive index using artificial neural networks

Yüksek A. G., Horoz S., Demir İ., Altuntaş İ., Şenadım Tüzemen E.

PHYSICA B: CONDENSED MATTER , cilt.695, ss.416581, 2024 (SCI-Expanded)

Real, imaginary and complex branches of Lamb waves in p-type piezoelectric semiconductor GaAs plate: Numerical and experimental investigation

Dhib A., Njeh A., Othmani C., Takali F., Ben Salah I., DEMİR İ., et al.

Materials Science in Semiconductor Processing , cilt.183, 2024 (SCI-Expanded)

Effect of substrate temperature on Raman study and optical properties of GeOx/Si thin films

Baghdedi D., Hopoğlu H., DEMİR İ., ALTUNTAŞ İ., Abdelmoula N., Tüzemen E.

Journal of the Australian Ceramic Society , cilt.60, sa.2, ss.591-599, 2024 (SCI-Expanded)

Efect of substrate temperature on Raman study and optical properties of GeOx/Si thin flms

Baghdedi D., Hopoğlu H., Demir İ., Altuntaş İ., Abdelmoula ·. N., Şenadım Tüzemen E.

JOURNAL OF THE AUSTRALIAN CERAMIC SOCIETY , sa.60, ss.591-599, 2024 (SCI-Expanded)

Electrical characteristics of Al/AlGaAs/GaAs diode with high-Al concentration at the interface

Gullu H., Yıldız D., Yıldırım M., DEMİR İ., ALTUNTAŞ İ.

Journal of Materials Science: Materials in Electronics , cilt.35, sa.2, 2024 (SCI-Expanded)

Modeling of temperature-dependent photoluminescence of GaN epilayer by artificial neural network

Tüzemen E., YÜKSEK A. G., DEMİR İ., Horoz S., ALTUNTAŞ İ.

Journal of the Australian Ceramic Society , cilt.59, sa.5, ss.1145-1159, 2023 (SCI-Expanded)

Influence of Highly Efficient Carbon Doping on AlxGa1−xAs Layers with Different Al Compositions (x) Grown by MOVPE

Perkitel I., Kekül R., ALTUNTAŞ İ., GÜR E., DEMİR İ.

Journal of Electronic Materials , cilt.52, sa.9, ss.6042-6051, 2023 (SCI-Expanded)

Investigating the optical, electronic, magnetic properties and DFT of NiO films prepared using RF sputtering with various argon pressures

Hopoğlu H., KAYA D., Maslov M. M., KAYA S., DEMİR İ., ALTUNTAŞ İ., et al.

Physica B: Condensed Matter , cilt.661, 2023 (SCI-Expanded)

InGaAs-based Gunn light emitting diode

KALYON G., MUTLU S., KURUOĞLU F., Pertikel I., DEMİR İ., EROL A.

Materials Science in Semiconductor Processing , cilt.159, 2023 (SCI-Expanded)

Comprehensive growth and characterization study of GeOx/Si

Baghdedi D., Hopoğlu H., SARITAŞ S., DEMİR İ., ALTUNTAŞ İ., Abdelmoula N., et al.

Journal of Molecular Structure , cilt.1274, 2023 (SCI-Expanded)

High-quality AlN growth: a detailed study on ammonia flow

Yolcu G., Koçak M. N., Ünal D. H., ALTUNTAŞ İ., Horoz S., DEMİR İ.

Journal of Materials Science: Materials in Electronics , cilt.34, sa.4, 2023 (SCI-Expanded)

Effect of Si-doped and undoped inter-layer transition time on the strain-compensated InGaAs/InAlAs QCL active region grown with MOVPE

Perkitel I., DEMİR İ.

Journal of Molecular Structure , cilt.1272, 2023 (SCI-Expanded)

Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation

Ben Arbia M., DEMİR İ., Kaur N., Saidi F., Zappa D., Comini E., et al.

Materials Science in Semiconductor Processing , cilt.153, 2023 (SCI-Expanded)

In-situ thermal cleaning of the sapphire substrate and temperature effect on epitaxial AlN

Kocak M. N., Yolcu G., Horoz S., ALTUNTAŞ İ., DEMİR İ.

VACUUM , cilt.205, 2022 (SCI-Expanded)

Determination of Optical Properties of MOVPE-Grown InxGa1-xAs/InP Epitaxial Structures by Spectroscopic Ellipsometry

Kaynar E., Sayrac M., Altuntas I., Demir I.

BRAZILIAN JOURNAL OF PHYSICS , cilt.52, sa.5, 2022 (SCI-Expanded)

In-situ and ex-situ face-to-face annealing of epitaxial AlN

Kocak M. N., Purlue K. M., Perkitel I., ALTUNTAŞ İ., DEMİR İ.

VACUUM , cilt.203, 2022 (SCI-Expanded)

Close oxygen coupled low-pressure chemical vapor deposition growth of high quality beta - Ga2O3 on sapphire

AKYOL F., DEMİR İ.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.146, 2022 (SCI-Expanded)

The influence of TMGa pre-flow time and amount as surfactant on the structural and optical properties of AlN epilayer

Yolcu G., Simsek I., Kekul R., Altuntaş İ., Horoz S., Demir İ.

MICRO AND NANOSTRUCTURES , cilt.168, 2022 (SCI-Expanded)

Performance enhancement of AlGaN deep-ultraviolet laser diode using compositional Al-grading of Si-doped layers

Sharif M. N., Khan M. A., Wali Q., DEMİR İ., Wang F., Liu Y.

OPTICS AND LASER TECHNOLOGY , cilt.152, 2022 (SCI-Expanded)

Optical and nano-mechanical characterization of c-axis oriented AlN film

Panda P., Rajagopalan R., Tripursundari S., ALTUNTAŞ İ., DEMİR İ.

Optical Materials , cilt.129, 2022 (SCI-Expanded)

Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE

Purlu K. M., Kocak M. N., Yolcu G., Perkitel I., Altuntaş İ., Demir İ.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.142, 2022 (SCI-Expanded) Sürdürülebilir Kalkınma

Sensitivity of indium molar fraction in InGaN quantum wells for near-UV light-emitting diodes

Sharif M. N., Wali Q., Rehman H. U., Xing Z., Khan S. U., Zhang A., et al.

MICRO AND NANOSTRUCTURES , cilt.165, 2022 (SCI-Expanded)

<p>Systematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications & nbsp;</p>

Badreddine S., Joshya R. S., DEMİR İ., Faouzi S., ALTUNTAŞ İ., Lagarde D., et al.

OPTICS AND LASER TECHNOLOGY , cilt.148, 2022 (SCI-Expanded)

Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP

Smiri B., DEMİR İ., Saidi F., ALTUNTAŞ İ., Hassen F., Maaref H., et al.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.140, 2022 (SCI-Expanded)

ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties, and microstructural analysis

ŞENADIM TÜZEMEN E., ÖZER A., DEMİR İ., ALTUNTAŞ İ., ŞİMŞİR M.

JOURNAL OF THE AUSTRALIAN CERAMIC SOCIETY , cilt.57, sa.5, ss.1379-1388, 2021 (SCI-Expanded)

Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy

Simsek I., Yolcu G., Kocak M., Purlu K., ALTUNTAŞ İ., DEMİR İ.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.32, sa.20, ss.25507-25515, 2021 (SCI-Expanded)

ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties and microstructural analysis

Şenadım Tüzemen E., Özer A., Demir İ., Altuntaş İ., Şimşir M.

JOURNAL OF THE AUSTRALIAN CERAMIC SOCIETY , cilt.87, sa.1, ss.1-8, 2021 (SCI-Expanded)

Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)

ALTUNTAŞ İ., Kocak M. N., Yolcu G., BUDAK H. F., KASAPOĞLU A. E., Horoz S., et al.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.127, 2021 (SCI-Expanded)

Optical and structural properties of In-rich InxGa1−xAs epitaxial layers on (1 0 0) InP for SWIR detectors

Smiri B., Ben Arbia M., Ilkay D., Saidi F., Othmen Z., Dkhil B., et al.

Materials Science and Engineering B: Solid-State Materials for Advanced Technology , cilt.262, 2020 (SCI-Expanded)

Influences of thickness and temperature of low temperature GaAs buffer layer on two-step MOVPE grown GaAs/Ge heterostructures

DEMİR İ., KASAPOĞLU A. E., BUDAK H. F., GÜR E., Elagoz S.

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS , cilt.90, sa.2, 2020 (SCI-Expanded)

AlGaN/AlN MOVPE heteroepitaxy: pulsed co-doping SiH4 and TMIn

DEMİR İ., Kocak Y., KASAPOĞLU A. E., Razeghi M., GÜR E., Elagoz S.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.34, sa.7, 2019 (SCI-Expanded)

Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs

Genc M., Sheremet V., Elci M., Kasapoglu A. E., Altuntas İ., Demir İ., et al.

SUPERLATTICES AND MICROSTRUCTURES , cilt.128, ss.9-13, 2019 (SCI-Expanded)

The contribution of AsH3: Pre-flow and V/III ratio effects on heteroepitaxially grown GaAs/Ge

DEMİR İ.

SUPERLATTICES AND MICROSTRUCTURES , cilt.128, ss.1-8, 2019 (SCI-Expanded)

High brightness ultraviolet light-emitting diodes grown on patterned silicon substrate

Robin Y., Ding K., DEMİR İ., McClintock R., ELAGÖZ S., Razeghi M.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.90, ss.87-91, 2019 (SCI-Expanded)

Microstructural Evolution of MOVPE Grown GaN by the Carrier Gas

Demir İ., Altuntas İ., Kasapoglu A. E., Mobtakeri S., Guer E., Elagoz S.

SEMICONDUCTORS , cilt.52, sa.16, ss.2030-2038, 2018 (SCI-Expanded)

Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications

DEMİR İ., ALTUNTAŞ İ., Bulut B., Ezzedini M., ERGÜN Y., ELAGÖZ S.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.33, sa.5, 2018 (SCI-Expanded)

Sandwich method to grow high quality AlN by MOCVD

Demir İ., Li H., Robin Y., McClintock R., Elagoz S., Razeghi M.

JOURNAL OF PHYSICS D-APPLIED PHYSICS , cilt.51, sa.8, 2018 (SCI-Expanded)

The effects of two-stage HT-GaN growth with different V/III ratios during 3D-2D transition

ALTUNTAŞ İ., DEMİR İ., KASAPOĞLU A. E., Mobtakeri S., GÜR E., ELAGÖZ S.

JOURNAL OF PHYSICS D-APPLIED PHYSICS , cilt.51, sa.3, 2018 (SCI-Expanded)

Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy

Demir İ., Robin Y., McClintock R., ELAGÖZ S., Zekentes K., Razeghi M.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , cilt.214, sa.4, 2017 (SCI-Expanded)

V/III ratio effects on high quality InAlAs for quantum cascade laser structures

DEMİR İ., ELAGÖZ S.

SUPERLATTICES AND MICROSTRUCTURES , cilt.104, ss.140-148, 2017 (SCI-Expanded)

Interruption time effects on InGaAs/InAlAs superlattices of quantum cascade laser structures grown by MOCVD

DEMİR İ., ELAGÖZ S.

SUPERLATTICES AND MICROSTRUCTURES , cilt.100, ss.723-729, 2016 (SCI-Expanded)

The hydrostatic pressure and temperature effects on the binding energy of magnetoexcitons in cylindrical quantum well wires

Baser P., Karki H. D., Demir İ., Elagoz S.

SUPERLATTICES AND MICROSTRUCTURES , cilt.63, ss.100-109, 2013 (SCI-Expanded)

Diğer Dergilerde Yayınlanan Makaleler

InGaAs-Based MSM Photodetector: Researching Absorption Layer, Barrier Layer, and Digital Graded Superlattice Layer with 3D Simulation

Unal D. H., DEMİR İ.

Results in Optics , cilt.13, 2023 (Scopus)

The effect of Si (111) substrate surface cleaning on growth rate and crystal quality of MOVPE grown AlN

Perkitel İ., Altuntaş İ., Demir İ.

GAZI UNIVERSITY JOURNAL OF SCIENCE , cilt.35, sa.1, ss.281-291, 2022 (ESCI)

Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates

DEMİR İ.

Cumhuriyet Science Journal , cilt.39, sa.3, ss.728-733, 2018 (Hakemli Dergi)

Optical and Structural Properties of MOCVD Grown InxGa1-xAs Epilayers

ALAYDIN B. Ö., ŞENADIM TÜZEMEN E., DEMİR İ., ELAGÖZ S.

Cumhuriyet Science Journal , cilt.38, sa.4, ss.681-689, 2017 (Hakemli Dergi)

Growth of InGaAs/InAlAs superlattices by MOCVD and precise thickness determination via HRXRD

Demir İ., ELAGÖZ S.

GAZI UNIVERSITY JOURNAL OF SCIENCE , cilt.29, sa.4, ss.947-951, 2016 (ESCI)

Hakemli Kongre / Sempozyum Bildiri Kitaplarında Yer Alan Yayınlar

The Effect of Layer Thickness on High-Performance MSM Photodetector Structure

Demir İ., Ünal D. H.

From Epitaxial Materials towards Technological Transfer: Academic/Industrial meeting, Paris, Fransa, 29 - 31 Ağustos 2023, ss.7

Comprehensive Growth and Characterization Study of GeOx/Si

Baghdedi D., Hopoğlu H., Sarıtaş S., Demir İ., Altuntaş İ., Abdelmoula N., et al.

5 th International Conference on Physical Chemistry & Functional Materials, Sivas, Türkiye, 23 - 25 Haziran 2022, ss.37

Reflectance properties of Geo2 films grown on P-Si substrate deposited by Magnetron Sputtering

Baghdedi D., Hopoğlu H., Sarıtaş S., Demir İ., Altuntaş İ., Abdelmoula N., et al.

3nd International Conference on Light and Light-based Technologies (ICLLT), Ankara, Türkiye, 25 - 27 Mayıs 2022, ss.1-2

Dependence of film thicknesses on the XRD, AFM and Transmittance Properties of NiOx

Hopoğlu H., Kaya D., Akyol M., Demir İ., Altuntaş İ., Ekicibil A., et al.

3nd International Conference on Light and Light-based Technologies (ICLLT), Ankara, Türkiye, 25 - 27 Mayıs 2022, ss.1-2

EFFECT OF V/III RATIO ON AlN THIN FILMS GROWN ON PATTERNED SAPPHIRE SUBSTRATE

Özbakır F. K., ALTUNTAŞ İ., DEMİR İ.

the 13th International Scientific Research Congress, 11 - 12 Mart 2022

Sputtered AlN for Distributed Bragg Reflectors Operating in the SWIR Wavelengths

Kaynar E., Hopoglu H., ALTUNTAŞ İ., DEMİR İ., SAYRAÇ M., Tüzemen E., et al.

Novel Optical Materials and Applications, NOMA 2022, Maastricht, Hollanda, 24 - 28 Temmuz 2022

Fabrication and Characterisation of InGaAs Gunn Diode-Based Light Emitting Device

KALYON G., MUTLU S., Perkitel İ., DEMİR İ., EROL A.

3rd International Eurasian Conference on Science, Engineering and Technology, Türkiye, 15 - 17 Aralık 2021

Optical and electrical characterızatıon of InGaAs epitaxial layers

AMINI S. M., KALYON G., MUTLU S., Perkitel İ., DEMİR İ., EROL A.

3rd International Eurasian Conference on Science, Engineering and Technology, Türkiye, 15 - 17 Aralık 2021

The Effect of Growth Temperature on the Electrical Properties of Carbon-doped AlxGa1-xAs Grown by MOVPE

Kekül R., Altuntaş İ., Demir İ.

9th International Advanced Technologies Symposium (IATS'21), Elazığ, Türkiye, 27 - 28 Ekim 2021, ss.280-283

The Effect of Growth Temperature on the Electrical Features of Carbon-doped AlxGa1-xAs Grown by MOVPE

Kekül R., ALTUNTAŞ İ., DEMİR İ.

9TH INTERNATIONAL ADVANCED TECHNOLOGIES SYMPOSIUM (IATS'21), 27 - 28 Ekim 2021

Influence of Pressure on ZnO/Al2O3 Produced by RF Magnetron Sputtering on Glass Substrate

Hopoğlu H., Aydınoğlu H., DEMİR İ., ALTUNTAŞ İ., ŞİMŞİR M., ŞENADIM TÜZEMEN E.

9TH INTERNATIONAL ADVANCED TECHNOLOGIES SYMPOSIUM (IATS'21), 27 - 28 Ekim 2021

Effect of Al Ratio on Optical and Structural Properties of MOCVD Grown AlGaAs/GaAs Epitaxial Structures

Kaynar E., ALTUNTAŞ İ., DEMİR İ.

9TH INTERNATIONAL ADVANCED TECHNOLOGIES SYMPOSIUM (IATS'21), 27 - 28 Ekim 2021

MOVPE PALE Tekniği ile Safir Üzerine Si Katkılı AlN’ın Epitaksiyel Büyütülmesi ve Karakterizasyonu

Pürlü K. M., Perkitel İ., Altuntaş İ., Demir İ.

9. Uluslararası Bilimsel Araştırmalar Kongresi, Fen ve Mühendislik Bilimleri, Ankara, Türkiye, 12 - 13 Aralık 2020, ss.167

Si (111) Alttaşı Üzerine Büyütülmüş AIN İnce Filmlerin Spektroskopik Elipsometri Tekniği İle Optik Karakterizasyonu

Karakuş İ., Altuntaş İ., Demir İ.

9. Uluslararası Bilimsel Araştırmalar Kongresi, Fen ve Mühendislik Bilimleri, Ankara, Türkiye, 12 - 13 Aralık 2020, ss.125

Çekirdeklenme Tabakası Sıcaklığının MOCVD Yöntemi İle Büyütülen AlN İnce Filmlerin Kristal Kalitesi Üzerindeki Etkisi

Şimşek İ., Yolcu G., Koçak M. N., Altuntaş İ., Demir İ.

9. Uluslararası Bilimsel Araştırmalar Kongresi, Fen ve Mühendislik Bilimleri, Ankara, Türkiye, 12 - 13 Aralık 2020, ss.417-426

PECVD grown SiN photonic crystal micro-domes for the light extraction enhancement of GaN LEDs

Genç M., Sheremet V., Altuntaş İ., Demir İ., Gür E., Elagöz S., et al.

Conference on Gallium Nitride Materials and Devices XV, San-Francisco, Kostarika, 4 - 06 Şubat 2020, cilt.11280

Annealing effect on optical and electrical properties of p-GaN

ALTUN D., ALTUNTAŞ İ., DEMİR İ., GÜR E., ELAGÖZ S.

International Eurasian Conference on Science, Engineering and Technology (EurasianSciEnTech 2018), 22 - 23 Kasım 2018

Growth temperature effect investigation of pulsed atomic layer epitaxy grown AlN on non-patterned silicon substrate

DEMİR İ.

International Congress on Engineering and Architecture (ENAR-2018), 14 - 16 Kasım 2018

Defect Reduction in GaN Epilayer With Different V/III Ratio Grown On Patterned Sapphire Substrate

ALTUNTAŞ İ., DEMİR İ., KIZILBULUT A. A., Bulut B., ELAGÖZ S.

International Congress on Engineering and Architecture (ENAR-2018), 14 - 16 Kasım 2018

Growth and characterization of epitaxially grown GaN layer on patterned sapphire substrate

ALTUNTAŞ İ., DEMİR İ., KIZILBULUT A. A., Bulut B., ELAGÖZ S.

Lasers Optics Photonics and Atomic Plasma Science, 16 - 17 Temmuz 2018

Pulsed MOVPE Growth of High Quality AlGaN epilayers for Ultraviolet LED Applications

DEMİR İ., McClintock R., KOÇAK Y., ALTUNTAŞ İ., KASAPOĞLU A. E., GÜR E., et al.

European Conference on Laser Optics Photonics, 16 - 17 Temmuz 2018

Comprehensive comparison of epitaxially grown GaN layer grown on conventional sapphire and patterned sapphire substrate

ALTUNTAŞ İ., DEMİR İ., KIZILBULUT A. A., Bulut B., ELAGÖZ S.

19th World Congress on Materials Science and Engineering, 11 - 13 Temmuz 2018

Sandwich method to grow high quality AlN by MOCVD

DEMİR İ., Li H., Robin Y., McClintock R., ELAGÖZ S., Razeghi M.

19th World Congress on Materials Science and Engineering, 11 - 13 Haziran 2018

GROWTH AND CHARACTERIZATION STUDY ON STRAIN BALANCED QUANTUM CASCADE LASER STRUCTURES

DEMİR İ., ALTUNTAŞ İ., ELAGÖZ S.

4th International Conference on Engineering and Natural Sciences (ICENS), 2 - 06 Mayıs 2018

EFFECT OF V/III RATIO ON C-PLANE GAN LAYERS WITH TWO STAGES HT-GAN

ALTUNTAŞ İ., DEMİR İ., ELAGÖZ S.

4th International Conference on Engineering and Natural Sciences (ICENS), 2 - 06 Mayıs 2018

Defect Reduction of Epitaxially Grown GaN Layer on Patterned Sapphire Substrate

ALTUNTAŞ İ., DEMİR İ., KIZILBULUT A. A., BULUT B., ELAGÖZ S.

UV LED Technologies & Applications ICULTA -2018, 22 - 25 Nisan 2018

High quality nitride materials (AlN and AlGaN) on Si and sapphire substrates and UV-LED applications

DEMİR İ., Li H., Robin Y., McClintock R., ALTUNTAŞ İ., ELAGÖZ S., et al.

8th International Conference and Exhibition on Lasers, Optics Photonics, LasVegas, Amerika Birleşik Devletleri, 15 - 17 Kasım 2017, cilt.4, ss.149

The Effects of Two Stages GaN Growth with Different V/III Ratios During 3D-2D Transition

ALTUNTAŞ İ., DEMİR İ., ELAGÖZ S.

8th International Conference and Exhibition on LASERS, OPTICS PHOTONICS, Las Vegas, Amerika Birleşik Devletleri, 15 - 17 Kasım 2017

The Influences of Carrier Gas Flow on Crystal Quality of GaN

DEMİR İ., ALTUNTAŞ İ., Bulut B., ELAGÖZ S.

Turkish Physical Society 33rd International Physics Congress, Bodrum/Muğla, Türkiye, 6 - 10 Eylül 2017

MOCVD Grown InGaAs/InAlAs Superlattices for Quantum Cascade Laser Applications

ELAGÖZ S., DEMİR İ.

International Congress on Semiconductor Materials and Devices, Konya, Türkiye, 17 - 19 Ağustos 2017, ss.6

Using Source Delay Technique to Grow High Quality InAlAs/InGaAs superlattices by MOCVD

DEMİR İ., ALTUNTAŞ İ., ELAGÖZ S.

17th European Workshop on Metalorganic Vapour Phase Epitaxt (EW-MOVPE17), Greonable, Fransa, 18 - 21 Haziran 2017

Growth of High Quality InGaN/GaN Multi Quantum Well via MOCVD and Introducing a Technique for Precise Thickness Determination

ALTUNTAŞ İ., DEMİR İ., ELAGÖZ S.

17th European Workshop on Metalorganic Vapour Phase Epitaxt (EW-MOVPE17), Greonable, Fransa, 18 - 21 Haziran 2017

STUDY OF DEFECTS IN GAN EPILAYER GROWN ON PATTERNED SAPPHIRE SUBSTRATE

ALTUNTAŞ İ., DEMİR İ., KIZILBULUT A. A., BULUT B., ERKUŞ M., ÇETİNKAYA A. O., et al.

III International Conference on Engineering and Natural Science (ICENS), Budapest, Macaristan, 3 - 07 Mayıs 2017

Optical Comparison of MOCVD Grown GaN Layers on Flat and Patterned Sapphire Substrates

DEMİR İ., ALTUNTAŞ İ., KIZILBULUT A. A., BULUT B., ELAGÖZ S.

III International Conference on Engineering and Natural Science (ICENS), Budapest, Macaristan, 3 - 07 Mayıs 2017

Improved GaN Quality by Two Stages Ammonia Flow

DEMİR İ., ALTUNTAŞ İ., BULUT B., KIZILBULUT A. A., ELAGÖZ S.

III International Conference on Engineering and Natural Science (ICENS), Budapest, Macaristan, 3 - 07 Mayıs 2017

Structural Comparison of Epitaxially Grown GaN Layer on Conventional Sapphire and Patterned Sapphire Substrates

ALTUNTAŞ İ., DEMİR İ., KIZILBULUT A. A., BULUT B., ELAGÖZ S.

III International Conference on Engineering and Natural Science (ICENS), Budapest, Macaristan, 3 - 07 Mayıs 2017

Structural Comparison Of Epitaxially Grown Gan Layer On Conventional Sapphire And Patterned Sapphire Substrate

ALTUNTAŞ İ., DEMİR İ., KIZILBULUT A. A., BULUT B., ELAGÖZ S.

3rd International Conference On Engineering And Natural Science Uluslararası, Makedonya, 05 Mayıs 2017

High Quality InGaAs InAlAs Superlattices Growth by MOCVD

DEMİR İ., Alaydın B. Ö., ALTUNTAŞ İ., ELAGÖZ S.

3th International Nanoscience and Nanotechnolgy for Next Generation, 20 - 23 Ekim 2016

The Effects of Carrier Gas on 3D 2D Transition of GaN

ALTUNTAŞ İ., DEMİR İ., KIZILBULUT A. A., BULUT B., ELAGÖZ S.

3th International Nanoscience and Nanotechnolgy for Next Generation, Antalya, Türkiye, 20 - 23 Ekim 2016

High Quality InGaAs/InAlAs Superlattices Growth by MOCVD

DEMİR İ., ALAYDİN B. Ö., ALTUNTAŞ İ., ELAGÖZ S.

3th NANOSCIENCE NANOTECHNOLOGY FOR NEXT GENERATION, 1 - 03 Ekim 2016

EFFECT OF RECRYSTALLIZATION TIME ON TWO STEP MOCVD GROWN GAN

ALTUNTAŞ İ., DEMİR İ., ELAGÖZ S.

Türk Fizik Derneği 32. Uluslararası Fizik Kongresi (TFD32), Muğla/Bodrum, Türkiye, 6 - 09 Eylül 2016

Structural Optical Electrical and Magnetic Properties of Undoped and Ni Doped CdZnS

HOROZ S., DEMİR İ., EKİCİBİL A., ELAGÖZ S., ŞAHİN Ö.

Turkish Physical Society 32nd International Physics Congress, Muğla, Türkiye, 6 - 09 Eylül 2016

Effect of Recrystallization Time on Two Steps MOCVD Grown GaN

ALTUNTAŞ İ., DEMİR İ., ELAGÖZ S.

Turkish Physical Society 32nd International Physics Congress, Muğla, Türkiye, 6 - 09 Eylül 2016

AMMONIA PRE FLOW EFFECTS IN GROWTH OF EPITAXIAL GAN ON SAPPHIRE SUBSTRATE

BULUT B., DEMİR İ., ALTUNTAŞ İ., ELAGÖZ S.

Türk Fizik Derneği 32. Uluslararası Fizik Kongresi (TFD32), Muğla/Bodrum, Türkiye, 6 - 09 Eylül 2016

Growth And Characterization Of High Aluminium Alloy Concentration (x=0.92-0.94) AlxGa1-xAs for Optoelectronic Application

ALAYDİN B. Ö., DEMİR İ., ELAGÖZ S.

Tfd 32, International Physics Congree, 6 - 09 Eylül 2016

Epitaxial Growth by Metal Organic Chemical Vapor Deposition MOCVD and Structural Characterization of GaAs Films on Ge Substrates

DEMİR İ., ALTUNTAŞ İ., ALAYDİN B. Ö., BOZ M. A., KARKI H. D., ELAGÖZ S.

NanoTR 9, 24 - 28 Temmuz 2013

EPİTAXİAL GROWTH BY METAL ORGANİC VAPOR DEPOSİTİON (MOCVD) AND STRUCTURAL CHARACTERİZATİON OF GAAS FİLMS ON GE SUBSTRATES

DEMİR İ., ALTUNTAŞ İ., ALAYDİN B. Ö., KIZILBULUT A. A., ELAGÖZ S.

Nano-tr 9, Erzurum, Türkiye, 28 Haziran 2013

The effect of growth rate with constant V/III ratio to the crystal quality of GaAs grown by MOCVD

DEMİR İ., ALTUNTAŞ İ., ALAYDİN B. Ö., ELAGÖZ S., KARKI H. D.

9th Nanoscience and Nanotechnology Conference (Nano TR-9), 24 Haziran 2013 - 28 Haziran 2018

Specular reflectance spectra of GaAs on Ge substrate grown by MOCVD

KIZILBULUT A. A., ŞENADIM TÜZEMEN E., DEMİR İ., ALTUNTAŞ İ., DİDEM B., KARKI H. D., et al.

Nanotr-9-Erzurum, 24 - 28 Haziran 2013

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